Datasheet.Directory

{"Reverse Test Voltage":"80 V","Terminal Finish":"TIN LEAD","Diode Capacitance-Nom":"33 pF","Breakdown Voltage-Min":"90 V","Rep Pk Reverse Voltage-Max":"90 V","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","JESD-609 Code":"e0","Quality Factor-Min":"50","Package Shape":"ROUND","Status":"Discontinued","Operating Temperature-Min":"-65 Cel","Package Body Material":"GLASS","Terminal Form":"WIRE","Sub Category":"Varactors","Configuration":"SINGLE","Reverse Current-Max":"5.00E-7 \u00b5A"...

{"Reverse Test Voltage":"80 V","Diode Capacitance-Nom":"33 pF","Breakdown Voltage-Min":"90 V","Terminal Form":"WIRE","Operating Temperature-Max":"150 Cel","Diode Cap Tolerance":"5 %","Quality Factor-Min":"50","Package Shape":"ROUND","Status":"Discontinued","Operating Temperature-Min":"-65 Cel","Package Body Material":"GLASS","Configuration":"SINGLE","Reverse Current-Max":"0.5000 \u00b5A","Diode Capacitance Ratio-Min":"4","Surface Mount":"NO","Case Connection":"ISOLATED","Mfr Package Description":"DIE-1","Nu...

{"Status":"Active","Diode Type":"VARIABLE CAPACITANCE DIODE"}...

{"C1/C2 Min. Capacitance Ratio":"4.0","V(RRM)(V) Rep.Pk.Rev. Voltage":"90","Semiconductor Material":"Silicon","Q Factor Min.":"50","Package":"DO-7","P(D) Max.(W) Power Dissipation":"400m","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"33p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4","@V(Q min)(V) (Test Condition)":"4"}...