Datasheet.Directory

{"Reverse Test Voltage":"60 V","Terminal Finish":"TIN LEAD","Diode Capacitance-Nom":"33 pF","Breakdown Voltage-Min":"66 V","Rep Pk Reverse Voltage-Max":"66 V","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","JESD-609 Code":"e0","Quality Factor-Min":"7","Package Shape":"ROUND","Additional Feature":"LOW LEAKAGE","Status":"Discontinued","Operating Temperature-Min":"-65 Cel","Package Body Material":"GLASS","Terminal Form":"WIRE","Sub Category":"Varactors","Configuration":"SINGLE","Reve...

{"Reverse Test Voltage":"60 V","Diode Capacitance-Nom":"33 pF","Breakdown Voltage-Min":"66 V","Terminal Form":"WIRE","Operating Temperature-Max":"150 Cel","Diode Cap Tolerance":"1 %","Quality Factor-Min":"7","Package Shape":"ROUND","Additional Feature":"LOW LEAKAGE","Status":"Discontinued","Operating Temperature-Min":"-65 Cel","Package Body Material":"GLASS","Configuration":"SINGLE","Reverse Current-Max":"0.1000 \u00b5A","Diode Capacitance Ratio-Min":"6.5","Surface Mount":"NO","Case Connection":"ISOLATED","...

{"Status":"Active","Diode Type":"VARIABLE CAPACITANCE DIODE"}...

{"C1/C2 Min. Capacitance Ratio":"6.5","V(RRM)(V) Rep.Pk.Rev. Voltage":"66","Semiconductor Material":"Silicon","Q Factor Min.":"7.0","Package":"DO-7","P(D) Max.(W) Power Dissipation":"400m","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"0.5","Ct{Cj} Nom. (F) Junction Cap.":"33p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4","@V(Q min)(V) (Test Condition)":"4"}...