Product Details Search Results:
Toshiba.co.jp/SSM5P16FU
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1000 A","Configuration":"COMPLEX","Drain-source On Resistance-Max":"12 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"20 V","Transistor Application"...
1486 Bytes - 12:38:59, 25 December 2025
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| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| SSM5P16FU.pdf | 0.19 | 1 | Request |
