Product Datasheet Search Results:
- SIHFR1N60AT
- Vishay Presicion Group
- 1.4 A, 600 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
- SIHFR1N60AT-E3
- Vishay Presicion Group
- 1.4 A, 600 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
- SIHFR1N60ATL-E3
- Vishay Presicion Group
- 1.4 A, 600 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
- SIHFR1N60ATR-E3
- Vishay Presicion Group
- 1.4 A, 600 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
- SIHFR1N60ATR-GE3
- Vishay Presicion Group
- POWER, FET
- SIHFR1N60ATRL-GE3
- Vishay Presicion Group
- POWER, FET
- SIHFR1N60ATRR-GE3
- Vishay Presicion Group
- POWER, FET
Product Details Search Results:
Vishay.com/SIHFR1N60AT
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"93 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.4 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"5.6 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdow...
1517 Bytes - 03:34:32, 10 January 2026
Vishay.com/SIHFR1N60AT-E3
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"93 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.4 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"5.6 A","Channel Type":"N-CHANNEL",...
1608 Bytes - 03:34:32, 10 January 2026
Vishay.com/SIHFR1N60ATL-E3
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"93 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.4 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"5.6 A","Channel Type":"N-CHANNEL",...
1611 Bytes - 03:34:32, 10 January 2026
Vishay.com/SIHFR1N60ATR-E3
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"93 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.4 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"5.6 A","Channel Type":"N-CHANNEL",...
1612 Bytes - 03:34:32, 10 January 2026
Vishay.com/SIHFR1N60ATR-GE3
{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE POWER"}...
760 Bytes - 03:34:32, 10 January 2026
Vishay.com/SIHFR1N60ATRL-GE3
{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE POWER"}...
768 Bytes - 03:34:32, 10 January 2026
Vishay.com/SIHFR1N60ATRR-GE3
{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE POWER"}...
766 Bytes - 03:34:32, 10 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| XNS50660ATS.pdf | 3.31 | 1 | Request | |
| XNS50360ATS.pdf | 3.31 | 1 | Request | |
| XNS50660AT.pdf | 3.31 | 1 | Request | |
| XNS50360AT.pdf | 3.31 | 1 | Request | |
| DSS2-60AT2.pdf | 0.05 | 1 | Request | |
| XNS50360AT.pdf | 3.31 | 1 | Request | |
| XNS50660AT.pdf | 3.31 | 1 | Request | |
| XNS50360ATS.pdf | 3.31 | 1 | Request | |
| XNS50660ATS.pdf | 3.31 | 1 | Request | |
| SUPER_RPM_DC_MOTOR_FRAMES_B960AT_B1200AT_B1400AT_B1600AT.pdf | 0.61 | 1 | Request |










