Product Datasheet Search Results:
7 Pages, 960 KB, Original- JANTX2N6849
- Infineon Technologies Ag
- Trans MOSFET P-CH 100V 6.5A 3-Pin TO-39
7 Pages, 405 KB, Original- JANTX2N6849U
- Infineon Technologies Ag
- Trans MOSFET P-CH 100V 6.5A 18-Pin LLCC
7 Pages, 960 KB, Original- GRP-DATA-JANTX2N6849
- International Rectifier
- Trans MOSFET P-CH 100V 6.5A 3-Pin TO-39
7 Pages, 133 KB, Original- JANTX2N6849
- International Rectifier
- 6.5 A, 100 V, 0.345 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
7 Pages, 200 KB, Original- JANTX2N6849U
- International Rectifier
- 6.5 A, 100 V, 0.345 ohm, P-CHANNEL, Si, POWER, MOSFET
2 Pages, 96 KB, Original- JANTX2N6849
- Microsemi Corp.
- 6.5 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
8 Pages, 642 KB, Original- JANTX2N6849U
- Microsemi Corp.
- 6.5 A, 100 V, 0.345 ohm, P-CHANNEL, Si, POWER, MOSFET
3 Pages, 570 KB, Original- JANTX2N6849
- Semicoa
- POWER, FET
Product Details Search Results:
Infineon.com/JANTX2N6849
{"Polarity":"P","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"25(W)","Continuous Drain Current":"6.5(A)","Mounting":"Through Hole","Drain-Source On-Volt":"100(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-39","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...
1454 Bytes - 07:41:40, 10 January 2026
Infineon.com/JANTX2N6849U
{"Polarity":"P","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"6.5(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"100(V)","Power Dissipation":"25(W)","Operating Temp Range":"-55C to 150C","Package Type":"LLCC","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"18","Number of Elements":"1"}...
1452 Bytes - 07:41:40, 10 January 2026
Irf.com/GRP-DATA-JANTX2N6849
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"25(W)","Continuous Drain Current":"6.5(A)","Mounting":"Through Hole","Drain-Source On-Volt":"100(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-39","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...
1485 Bytes - 07:41:40, 10 January 2026
Irf.com/JANTX2N6849
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"92 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"25 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":...
1477 Bytes - 07:41:40, 10 January 2026
Irf.com/JANTX2N6849U
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"165 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"25 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1548 Bytes - 07:41:40, 10 January 2026
Microsemi.com/JANTX2N6849
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Featured Product":"High Reliability Power / Military MOSFETs","Package / Case":"TO-205AF Metal Can","Current - Continuous Drain (Id) @ 25\u00b0C":"6.5A (Tc)","Gate Charge (Qg) @ Vgs":"34.8nC @ 10V","Product Photos":"JANTX2N6782","Rds On (Max) @ Id, Vgs":"320 mOhm @ 6.5A, 10V","Datasheets":"2N6849","FET Type":"MOSFET P-Channel, Metal Oxide","Standard Package":"1","Drain to Source Voltage (Vdss)":"10...
1842 Bytes - 07:41:40, 10 January 2026
Microsemi.com/JANTX2N6849U
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Featured Product":"High Reliability Power / Military MOSFETs","Package / Case":"18-BQFN Exposed Pad","Current - Continuous Drain (Id) @ 25\u00b0C":"6.5A (Tc)","Gate Charge (Qg) @ Vgs":"34.8nC @ 10V","Product Photos":"JANTX2N6782U, JANTX2N6849U","Rds On (Max) @ Id, Vgs":"320 mOhm @ 6.5A, 10V","Datasheets":"2N6849U","FET Type":"MOSFET P-Channel, Metal Oxide","Standard Package":"1","Drain to Source Vo...
1881 Bytes - 07:41:40, 10 January 2026
Semicoa.com/JANTX2N6849
{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE POWER"}...
703 Bytes - 07:41:40, 10 January 2026
Documentation and Support
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| FE_03036849.pdf | 1.94 | 1 | Request | |
| SI_38626849.pdf | 1.12 | 1 | Request |
