Product Datasheet Search Results:

JANSF2N7431.pdf8 Pages, 761 KB, Original
JANSF2N7431
International Rectifier
Trans MOSFET N-CH 60V 35A 3-Pin TO-254AA
JANSF2N7431D.pdf8 Pages, 266 KB, Original
JANSF2N7431D
International Rectifier
35 A, 60 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET
JANSF2N7431U.pdf8 Pages, 178 KB, Original
JANSF2N7431U
International Rectifier
75 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Irf.com/JANSF2N7431
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"35 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0210 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"140 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR...
1509 Bytes - 13:42:23, 13 January 2026
Irf.com/JANSF2N7431D
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"35 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0210 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"284 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR...
1512 Bytes - 13:42:23, 13 January 2026
Irf.com/JANSF2N7431U
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0180 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"300 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1552 Bytes - 13:42:23, 13 January 2026

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