Datasheet.Directory

{"Category":"Discrete Semiconductor Products","Packaging":"Tube","Online Catalog":"N-Channel Standard FETs","Product Photos":"TO-264","Family":"FETs - Single","Vgs(th) (Max) @ Id":"6.5V @ 8mA","Series":"HiPerFET\u2122","Package / Case":"TO-264-3, TO-264AA","Supplier Device Package":"PLUS264\u2122","Rds On (Max) @ Id, Vgs":"49 mOhm @ 50A, 10V","Datasheets":"IXFB100N50Q3","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"25","Power - Max":"1560W","Featured Product":"Q3-Class HiPerFET\u2122 Power ...

{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b130(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"100(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"500(V)","Power Dissipation":"1560(W)","Operating Temp Range":"-55C to 150C","Package Type":"PLUS 264","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"5000 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"100 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0490 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"300 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500...