Product Datasheet Search Results:

IRFP048NPBF.pdf9 Pages, 1521 KB, Original
IRFP048NPBF
Infineon Technologies Ag
Trans MOSFET N-CH 55V 64A 3-Pin(3+Tab) TO-247AC Tube
IRFP048N.pdf9 Pages, 116 KB, Original
IRFP048N
International Rectifier
MOSFET N-CH 55V 64A TO-247AC
IRFP048N-201.pdf5 Pages, 258 KB, Scan
IRFP048N-201
International Rectifier
64 A, 55 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
IRFP048N-201PBF.pdf5 Pages, 258 KB, Scan
IRFP048N-201PBF
International Rectifier
64 A, 55 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
IRFP048N-202.pdf5 Pages, 258 KB, Scan
IRFP048N-202
International Rectifier
64 A, 55 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
IRFP048N-202PBF.pdf5 Pages, 258 KB, Scan
IRFP048N-202PBF
International Rectifier
64 A, 55 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
IRFP048N-203.pdf5 Pages, 258 KB, Scan
IRFP048N-203
International Rectifier
64 A, 55 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
IRFP048N-203PBF.pdf5 Pages, 258 KB, Scan
IRFP048N-203PBF
International Rectifier
64 A, 55 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
IRFP048N-204.pdf5 Pages, 258 KB, Scan
IRFP048N-204
International Rectifier
64 A, 55 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
IRFP048N-204PBF.pdf5 Pages, 258 KB, Scan
IRFP048N-204PBF
International Rectifier
64 A, 55 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
IRFP048N-205.pdf5 Pages, 258 KB, Scan
IRFP048N-205
International Rectifier
64 A, 55 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
IRFP048N-205PBF.pdf5 Pages, 258 KB, Scan
IRFP048N-205PBF
International Rectifier
64 A, 55 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Infineon.com/IRFP048NPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"64(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Rail/Tube","Power Dissipation":"140(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-247AC","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1480 Bytes - 01:07:04, 12 January 2026
Irf.com/IRFP048N
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Design Resources":"IRFP048N Saber Model IRFP048N Spice Model","Product Photos":"TO-247AC Pkg","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"25","Supplier Device Package":"TO-247AC","Datasheets":"IRFP048N","Rds On (Max) @ Id, Vgs":"16 mOhm @ 37A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Bulk","Power - Max":"140W","Other Names":"*IRFP048N","Package / Case":"...
1620 Bytes - 01:07:04, 12 January 2026
Irf.com/IRFP048N-201
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"270 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"64 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0160 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"210 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR...
1474 Bytes - 01:07:04, 12 January 2026
Irf.com/IRFP048N-201PBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"270 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"64 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0160 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"210 A","Channel Type":"N-C...
1542 Bytes - 01:07:04, 12 January 2026
Irf.com/IRFP048N-202
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"270 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"64 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0160 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"210 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR...
1473 Bytes - 01:07:04, 12 January 2026
Irf.com/IRFP048N-202PBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"270 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"64 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0160 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"210 A","Channel Type":"N-C...
1541 Bytes - 01:07:04, 12 January 2026
Irf.com/IRFP048N-203
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"270 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"64 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0160 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"210 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR...
1474 Bytes - 01:07:04, 12 January 2026
Irf.com/IRFP048N-203PBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"270 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"64 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0160 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"210 A","Channel Type":"N-C...
1543 Bytes - 01:07:04, 12 January 2026
Irf.com/IRFP048N-204
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"270 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"64 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0160 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"210 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR...
1474 Bytes - 01:07:04, 12 January 2026
Irf.com/IRFP048N-204PBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"270 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"64 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0160 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"210 A","Channel Type":"N-C...
1542 Bytes - 01:07:04, 12 January 2026
Irf.com/IRFP048N-205
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"270 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"64 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0160 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"210 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR...
1475 Bytes - 01:07:04, 12 January 2026
Irf.com/IRFP048N-205PBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"270 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"64 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0160 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"210 A","Channel Type":"N-C...
1542 Bytes - 01:07:04, 12 January 2026

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