Product Datasheet Search Results:
5 Pages, 195 KB, Scan- IRFF9130
- Harris Semiconductor
- Power MOSFET Data Book 1990
7 Pages, 960 KB, Original- IRFF9130
- Infineon Technologies Ag
- Trans MOSFET P-CH 100V 6.5A 3-Pin TO-39
7 Pages, 326 KB, Original- IRFF9130
- Intersil Corporation
- -6.5A, -100V, 0.300 ?, P-Channel Power MOSFET
7 Pages, 960 KB, Original- IRFF9130
- International Rectifier
- Trans MOSFET P-CH 100V 6.5A 3-Pin TO-39
7 Pages, 133 KB, Original- IRFF9130PBF
- International Rectifier
- 6.5 A, 100 V, 0.345 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
3 Pages, 202 KB, Original- IRFF9130
- Semelab Plc.
- 6.5 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
3 Pages, 202 KB, Original- IRFF9130-JQR-B
- Semelab Plc.
- 6.5 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
3 Pages, 202 KB, Original- IRFF9130-JQR-BE1
- Semelab Plc.
- 6.5 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
3 Pages, 202 KB, Original- IRFF9130-QR-B
- Semelab Plc.
- 6.5 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
3 Pages, 202 KB, Original- IRFF9130-QR-BR1
- Semelab Plc.
- 6.5 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
Product Details Search Results:
Infineon.com/IRFF9130
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"6.5(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Power Dissipation":"25(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-39","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...
1444 Bytes - 22:26:54, 11 January 2026
Irf.com/IRFF9130
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"92 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"25 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":...
1459 Bytes - 22:26:54, 11 January 2026
Irf.com/IRFF9130PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"92 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"25 A","Channel Type":"P-CHANNEL","FET Technology":"METAL...
1528 Bytes - 22:26:54, 11 January 2026
Semelab.co.uk/IRFF9130
{"Status":"ACTIVE","Channel Type":"P-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL, TO-39, 3 PIN","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.5 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source...
1315 Bytes - 22:26:54, 11 January 2026
Semelab.co.uk/IRFF9130-JQR-B
{"Status":"ACTIVE","Channel Type":"P-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL, TO-39, 3 PIN","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.5 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source...
1351 Bytes - 22:26:54, 11 January 2026
Semelab.co.uk/IRFF9130-JQR-BE1
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"TIN SILVER COPPER","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL, TO-39, 3 PIN","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Channel Type":"P-CHANNEL","Drain Current-Max (ID)":"6.5 A","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape...
1412 Bytes - 22:26:54, 11 January 2026
Semelab.co.uk/IRFF9130-QR-B
{"Status":"ACTIVE","Channel Type":"P-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL, TO-39, 3 PIN","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.5 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source...
1348 Bytes - 22:26:54, 11 January 2026
Semelab.co.uk/IRFF9130-QR-BR1
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"TIN SILVER COPPER","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL, TO-39, 3 PIN","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Channel Type":"P-CHANNEL","Drain Current-Max (ID)":"6.5 A","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape...
1406 Bytes - 22:26:54, 11 January 2026
Semelab.co.uk/IRFF9130R1
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"TIN SILVER COPPER","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL, TO-39, 3 PIN","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Channel Type":"P-CHANNEL","Drain Current-Max (ID)":"6.5 A","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape...
1376 Bytes - 22:26:54, 11 January 2026
