Product Datasheet Search Results:
2 Pages, 126 KB, Scan- IRFF230
- General Electric
- Power Transistor Data Book 1985
5 Pages, 178 KB, Scan- IRFF230
- Harris Semiconductor
- Power MOSFET Data Book 1990
5 Pages, 195 KB, Scan- IRFF230R
- Harris Semiconductor
- Power MOSFET Data Book 1990
7 Pages, 326 KB, Original- IRFF230
- Intersil Corporation
- 5.5A, 200V, 0.400 ?, N-Channel Power MOSFET
7 Pages, 1203 KB, Original- IRFF230
- International Rectifier
- Single N-Channel 200 V 2.5 W 42.1 nC Hexfet Transistor Through Hole - TO-39
7 Pages, 131 KB, Original- IRFF230PBF
- International Rectifier
- 5.5 A, 200 V, 0.46 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
1 Pages, 41 KB, Original- IRFF230R
- International Rectifier
- Rugged Series Power MOSFETs - N-Channel
2 Pages, 36 KB, Original- IRFF230
- Semelab Plc.
- 5.5 A, 200 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
2 Pages, 36 KB, Original- IRFF230-JQR-B
- Semelab Plc.
- 5.5 A, 200 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
Product Details Search Results:
Irf.com/IRFF230
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"54 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"22 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":...
1450 Bytes - 04:48:26, 12 January 2026
Irf.com/IRFF230PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"54 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"22 A","Channel Type":"N-CHANNEL","FET Technology":"METAL...
1518 Bytes - 04:48:26, 12 January 2026
Semelab.co.uk/IRFF230
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL, TO-39, 3 PIN","Pulsed Drain Current-Max (IDM)":"22 A","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.5 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND...
1345 Bytes - 04:48:26, 12 January 2026
Semelab.co.uk/IRFF230-JQR-B
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL, TO-39, 3 PIN","Pulsed Drain Current-Max (IDM)":"22 A","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.5 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND...
1381 Bytes - 04:48:26, 12 January 2026
Semelab.co.uk/IRFF230-JQR-BR1
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"4 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"22 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"200 V","Mfr...
1441 Bytes - 04:48:26, 12 January 2026
Semelab.co.uk/IRFF230R1
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"4 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"22 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"200 V","Mfr...
1403 Bytes - 04:48:26, 12 January 2026
Various/IRFF230R
{"C(iss) Max. (F)":"600p","Absolute Max. Power Diss. (W)":"25","V(BR)DSS (V)":"200","g(fs) Max, (S) Trans. conduct,":"4.5","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"50n","r(DS)on Max. (Ohms)":"400m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"22","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"2.5","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"3.0","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package":"TO-205AF","...
1264 Bytes - 04:48:26, 12 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| ET_5FF23050.pdf | 0.44 | 1 | Request | |
| TI_AFF230.pdf | 0.25 | 1 | Request | |
| TI_AFF230A.pdf | 0.26 | 1 | Request | |
| TI_AFF230K.pdf | 0.26 | 1 | Request |
