Product Datasheet Search Results:
2 Pages, 68 KB, Scan- IRF9510-013
- Vishay Presicion Group
- 4 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
2 Pages, 68 KB, Scan- IRF9510-013PBF
- Vishay Presicion Group
- 4 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
Product Details Search Results:
Vishay.com/IRF9510-013
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"200 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.2 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"16 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1445 Bytes - 12:25:53, 09 January 2026
Vishay.com/IRF9510-013PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"200 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.2 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"16 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-O...
1507 Bytes - 12:25:53, 09 January 2026
Documentation and Support
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| 110-0131-02.pdf | 0.58 | 1 | Request |
