Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"202(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"40(V)","Packaging":"Rail/Tube","Power Dissipation":"333(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-220-3","Current - Continuous Drain (Id) @ 25\u00b0C":"202A (Tc)","Gate Charge (Qg) @ Vgs":"196nC @ 10V","Product Photos":"TO-220AB PKG","PCN Assembly/Origin":"Warehouse Transfer 29/Jul/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"4 mOhm @ 121A, 10V","Datasheets":"IRF1404PbF"...

{"Category":"MOSFET","Maximum Drain Source Voltage":"40 V","Typical Rise Time":"190 ns","Typical Turn-Off Delay Time":"46 ns","Description":"Value","Maximum Continuous Drain Current":"202 A","Package":"3TO-220AB","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"17 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 175 \u00b0C","RDS-on":"4@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"33 ns"}...