Datasheet.Directory

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"21 ns","Typical Turn-Off Delay Time":"32 ns","Description":"Value","Maximum Continuous Drain Current":"67 A","Package":"3TO-252","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"17 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 175 \u00b0C","RDS-on":"12.4@10V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"8 ns"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO252-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 83\u00b5A","Input Capacitance (Ciss) @ Vds":"4320pF @ 50V","Series":"OptiMOS\u2122","Standard Package":"2,500","Supplier Device Package":"PG-TO252-3","Datasheets":"IPx12CN10N G","Rds On (Max) @ Id, Vgs":"12.4 mOhm @ 67A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"125W","Package / Case":"TO-252-3, DPak (2 Leads...

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"21 ns","Typical Turn-Off Delay Time":"32 ns","Description":"Value","Maximum Continuous Drain Current":"67 A","Package":"3TO-252","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"17 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 175 \u00b0C","RDS-on":"12.4@10V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"8 ns"}...