Product Datasheet Search Results:
7 Pages, 225 KB, Original- HGTG20N60B3
- Fairchild Semiconductor Corporation
- 40 A, 600 V, N-CHANNEL IGBT, TO-247
7 Pages, 229 KB, Original- HGTG20N60B3..
- Fairchild Semiconductor
- IGBT Single Transistor, 40 A, 2 V, 165 W, 600 V, TO-247, 3
7 Pages, 176 KB, Original- HGTG20N60B3D
- Fairchild Semiconductor Corporation
- 40 A, 600 V, N-CHANNEL IGBT, TO-247
7 Pages, 177 KB, Original- HGTG20N60B3D_NL
- Fairchild Semiconductor
- 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
7 Pages, 225 KB, Original- HGTG20N60B3_NL
- Fairchild Semiconductor
- 600V, UFS Series N-Channel IGBT
2 Pages, 33 KB, Original- HGTG20N60B3
- Harris Semiconductor
- 600V / 1200V UFS Series IGBTs
2 Pages, 33 KB, Original- HGTG20N60B3D
- Harris Semiconductor
- 600V / 1200V UFS Series IGBTs
6 Pages, 438 KB, Scan- HGTG20N60B3
- Intersil Corporation
- 40A, 600V, UFS Series N-Channel lGBTs
6 Pages, 108 KB, Original- HGTG20N60B3D
- Intersil Corporation
- 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
8 Pages, 420 KB, Original- HGTG20N60B3
- On Semiconductor
- Trans IGBT Chip N-CH 600V 40A 165000mW 3-Pin(3+Tab) TO-247 Tube
9 Pages, 427 KB, Original- HGTG20N60B3D
- On Semiconductor
- Trans IGBT Chip N-CH 600V 40A 165000mW 3-Pin(3+Tab) TO-247 Tube
Product Details Search Results:
Fairchildsemi.com/HGTG20N60B3
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"40A","Switching Energy":"475\u00b5J (on), 1.05mJ (off)","Vce(on) (Max) @ Vge, Ic":"2V @ 15V, 20A","Voltage - Collector Emitter Breakdown (Max)":"600V","Td (on/off) @ 25\u00b0C":"-","Input Type":"Standard","Package / Case":"TO-247-3","Gate Charge":"80nC","Product Photos":"TO-247-3","PCN Design/Specification":"Plating Material 20/Dec/2007","Product Training Modules":"High Voltage Switches for Power Processing","Reverse Recovery Ti...
1727 Bytes - 19:55:25, 14 January 2026
Fairchildsemi.com/HGTG20N60B3..
{"Collector Emitter Voltage V(br)ceo:":"600 V","Collector Emitter Voltage Vces:":"2 V","MSL:":"-","No. of Pins:":"3","DC Collector Current:":"40 A","Power Dissipation Pd:":"165 W","Transistor Case Style:":"TO-247","Operating Temperature Max:":"150 \u00b0C","SVHC:":"No SVHC (15-Jun-2015)"}...
1297 Bytes - 19:55:25, 14 January 2026
Fairchildsemi.com/HGTG20N60B3D
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"40A","Switching Energy":"475\u00b5J (on), 1.05mJ (off)","Vce(on) (Max) @ Vge, Ic":"2V @ 15V, 20A","PCN Design/Specification":"Plating Material 20/Dec/2007","Td (on/off) @ 25\u00b0C":"-","Input Type":"Standard","Package / Case":"TO-247-3","Gate Charge":"80nC","Product Photos":"TO-247-3","PCN Assembly/Origin":"Assembly Site Transfer 06/Apr/2015","Voltage - Collector Emitter Breakdown (Max)":"600V","Product Training Modules":"High ...
2065 Bytes - 19:55:25, 14 January 2026
Onsemi.com/HGTG20N60B3
{"Collector Current (DC) ":"40(A)","Operating Temperature (Min)":"-40C","Mounting":"Through Hole","Operating Temperature (Max)":"150C","Gate to Emitter Voltage (Max)":"'\u00b120(V)","Channel Type":"N","Packaging":"Rail/Tube","Operating Temperature Classification":"AUTOMOTIVEC","Rad Hardened":"No","Package Type":"TO-247","Configuration":"Single","Pin Count":"3 +Tab"}...
1452 Bytes - 19:55:25, 14 January 2026
Onsemi.com/HGTG20N60B3D
{"Collector Current (DC) ":"40(A)","Operating Temperature (Min)":"-40C","Mounting":"Through Hole","Operating Temperature (Max)":"150C","Gate to Emitter Voltage (Max)":"'\u00b120(V)","Channel Type":"N","Packaging":"Rail/Tube","Operating Temperature Classification":"AUTOMOTIVEC","Rad Hardened":"No","Package Type":"TO-247","Configuration":"Single","Pin Count":"3 +Tab"}...
1449 Bytes - 19:55:25, 14 January 2026
Documentation and Support
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| IXGX320N60B3.pdf | 0.19 | 1 | Request | |
| IXGK120N60B3.pdf | 0.19 | 1 | Request |
