Product Datasheet Search Results:
8 Pages, 186 KB, Original- HGT1S10N120BNST
- Fairchild Semiconductor Corporation
- 35 A, 1200 V, N-CHANNEL IGBT, TO-263AB
10 Pages, 295 KB, Original- HGT1S10N120BNST
- On Semiconductor
- Trans IGBT Chip N-CH 1200V 35A 298000mW 3-Pin(2+Tab) D2PAK T/R
Product Details Search Results:
Fairchildsemi.com/HGT1S10N120BNST
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"35A","Switching Energy":"320\u00b5J (on), 800\u00b5J (off)","Vce(on) (Max) @ Vge, Ic":"2.7V @ 15V, 10A","Td (on/off) @ 25\u00b0C":"23ns/165ns","Input Type":"Standard","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Gate Charge":"100nC","Product Photos":"TO-263","Voltage - Collector Emitter Breakdown (Max)":"1200V","Product Training Modules":"High Voltage Switches for Power Processing","Reverse Recovery Time (t...
2364 Bytes - 05:48:56, 18 January 2026
Onsemi.com/HGT1S10N120BNST
{"Collector Current (DC) ":"35(A)","Operating Temperature (Min)":"-55C","Mounting":"Surface Mount","Operating Temperature (Max)":"150C","Gate to Emitter Voltage (Max)":"'\u00b120(V)","Channel Type":"N","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"D2PAK","Configuration":"Single","Pin Count":"2 +Tab"}...
1456 Bytes - 05:48:56, 18 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| VV5QC21-04N7FD3-BNST.pdf | 14.64 | 1 | Request |
