Product Datasheet Search Results:
9 Pages, 89 KB, Original- HAF2021S
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel Power MOS FET
Product Details Search Results:
Renesas.com/HAF2021S
{"Category":"MOSFET","Maximum Drain Source Voltage":"60 V","Typical Rise Time":"75000 ns","Typical Turn-Off Delay Time":"3000 ns","Description":"Value","Maximum Continuous Drain Current":"50 A","Package":"3LDPAK(S)","Mounting":"Surface Mount","Maximum Gate Source Voltage":"16 V","Typical Turn-On Delay Time":"20000 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"12@10V mOhm","Manufacturer":"Renesas Electronics","Typical Fall Time":"2600 ns"}...
1344 Bytes - 10:49:38, 14 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| UHAF204165A8445A11.pdf | 0.03 | 1 | Request |
