Product Datasheet Search Results:
4 Pages, 249 KB, Original- FLM1414-12F
- Sumitomo Electric Industries, Ltd.
- KU BAND, GaAs, N-CHANNEL, RF POWER, JFET
4 Pages, 221 KB, Scan- FLM1414-12F
- Fujitsu Semiconductor
- KU BAND, GaAs, N-CHANNEL, RF POWER, JFET
4 Pages, 88 KB, Original- FLM1414-12F
- Fujitsu
- FET, P Channel, ID 9 A
Product Details Search Results:
Eudyna.com/FLM1414-12F
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Drain Current-Max (ID)":"4.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"15 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOU...
1487 Bytes - 12:45:14, 17 January 2026
Fujitsu.com/FLM1414-12F
{"Status":"CONSULT MFR","Channel Type":"N-CHANNEL","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, METAL CERAMIC PACKAGE-2","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"FLANGE MOUNT","Drain Current-Max (ID)":"4.5 A","Transistor Element Material":"GALLIUM ARSENIDE","Highest Frequency Band":"KU BAND","Number of Elements":"1","Case Connection":"SOURCE","FET Technology":"JUNCTION","Terminal Position":"DUAL","Transistor Type":"RF POWER",...
1347 Bytes - 12:45:14, 17 January 2026
