Product Datasheet Search Results:
8 Pages, 253 KB, Original- FDS3812L86Z
- Fairchild Semiconductor Corporation
- 3.4 A, 80 V, 0.074 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Fairchildsemi.com/FDS3812L86Z
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Avalanche Energy Rating (Eas)":"90 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.4 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0740 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"N-CHANNEL","FET Technology":"...
1564 Bytes - 13:34:08, 12 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| US2:CMFDS3120.pdf | 2.21 | 1 | Request | |
| US2:CMFDS3120.pdf | 2.21 | 1 | Request | |
| FDS3500H6W-P.pdf | 0.07 | 1 | Request | |
| FDS3500SU.pdf | 0.05 | 1 | Request | |
| FDS3500H4W-P.pdf | 0.07 | 1 | Request | |
| FDS3500H2W-P.pdf | 0.07 | 1 | Request | |
| FDS3500H5W-P.pdf | 0.07 | 1 | Request | |
| FDS3500H3W-P.pdf | 0.17 | 1 | Request | |
| FDS3500H1W-P.pdf | 0.07 | 1 | Request |
