Product Datasheet Search Results:

DN2535N3-G.pdf6 Pages, 756 KB, Original
DN2535N3-G
Microchip Technology
MOSFET N-CH 350V 0.12A TO92-3
DN2535N3-G-P003.pdf6 Pages, 756 KB, Original
DN2535N3-G-P003
Microchip Technology
MOSFET N-CH 350V 0.12A TO92-3
DN2535N3-G-P013.pdf6 Pages, 756 KB, Original
DN2535N3-G-P013
Microchip Technology
MOSFET N-CH 350V 0.12A TO92-3
DN2535N3-G.pdf6 Pages, 548 KB, Original
DN2535N3-G
Supertex, Inc.
120 mA, 350 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92

Product Details Search Results:

Microchip.com/DN2535N3-G
{"Category":"Discrete Semiconductor Products","FET Feature":"Depletion Mode","Online Catalog":"N-Channel Depletion Mode FETs","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"FETs - Single","Vgs(th) (Max) @ Id":"-","Series":"-","Package / Case":"TO-226-3, TO-92-3 (TO-226AA)","Supplier Device Package":"TO-92 (TO-226)","Datasheets":"DN2535","Rds On (Max) @ Id, Vgs":"25 Ohm @ 120mA, 0V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Bulk","Power - Max":"1W","Standard Package":"1,...
1783 Bytes - 20:28:08, 13 January 2026
Microchip.com/DN2535N3-G P002
{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"350 V","Transistor Polarity":"N-Channel","Brand":"Microchip Technology","Id - Continuous Drain Current":"120 mA","Mounting Style":"Through Hole","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"25 Ohms","Package / Case":"TO-92-3","RoHS":"Details","Manufacturer":"Microchip"}...
1382 Bytes - 20:28:08, 13 January 2026
Microchip.com/DN2535N3-G-P003
{"Category":"Discrete Semiconductor Products","FET Feature":"Depletion Mode","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"FETs - Single","Vgs(th) (Max) @ Id":"-","Series":"-","Package / Case":"TO-226-3, TO-92-3 (TO-226AA)","Supplier Device Package":"TO-92 (TO-226)","Datasheets":"DN2535","Rds On (Max) @ Id, Vgs":"25 Ohm @ 120mA, 0V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"1W","Standard Package":"2,000","PCN Assembly/Origin":"Fab Site ...
1741 Bytes - 20:28:08, 13 January 2026
Microchip.com/DN2535N3-G P005
{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"350 V","Transistor Polarity":"N-Channel","Brand":"Microchip Technology","Id - Continuous Drain Current":"120 mA","Mounting Style":"Through Hole","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"25 Ohms","Package / Case":"TO-92-3","RoHS":"Details","Manufacturer":"Microchip"}...
1330 Bytes - 20:28:08, 13 January 2026
Microchip.com/DN2535N3-G-P013
{"Category":"Discrete Semiconductor Products","FET Feature":"Depletion Mode","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"FETs - Single","Vgs(th) (Max) @ Id":"-","Series":"-","Package / Case":"TO-226-3, TO-92-3 (TO-226AA)","Supplier Device Package":"TO-92 (TO-226)","Datasheets":"DN2535","Rds On (Max) @ Id, Vgs":"25 Ohm @ 120mA, 0V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"1W","Standard Package":"2,000","PCN Assembly/Origin":"Fab Site ...
1741 Bytes - 20:28:08, 13 January 2026
Microchip.com/DN2535N3-G P014
{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"350 V","Transistor Polarity":"N-Channel","Brand":"Microchip Technology","Id - Continuous Drain Current":"120 mA","Mounting Style":"Through Hole","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"25 Ohms","Package / Case":"TO-92-3","RoHS":"Details","Manufacturer":"Microchip"}...
1331 Bytes - 20:28:08, 13 January 2026
Microchip_technology_inc_/DN2535N3-G
862 Bytes - 20:28:08, 13 January 2026
Microchip_technology_inc_/DN2535N3-G-P003
991 Bytes - 20:28:08, 13 January 2026
Microchip_technology_inc_/DN2535N3-G-P013
990 Bytes - 20:28:08, 13 January 2026
Supertex.com/DN2535N3-G
{"Terminal Finish":"MATTE TIN","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1200 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"25 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"350 V","Transistor A...
1448 Bytes - 20:28:08, 13 January 2026

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