Product Datasheet Search Results:
4 Pages, 51 KB, Original- CM1200HB-66H
- Mitsubishi Electric & Electronics Usa, Inc.
- 1200 A, 3300 V, N-CHANNEL IGBT
4 Pages, 51 KB, Original- CM1200HB-66H
- Mitsubishi Electric Semiconductor
- HVIGBT Module
7 Pages, 138 KB, Original- 1SD536F2-CM1200HB-66H_OPT1
- Power Integrations
- Power Management Modules 1SD536F2 2.53.3kV IGBT Driver HVIC
2 Pages, 85 KB, Scan- CM1200HB-66H
- Powerex, Inc. - Pa
- 1200 A, 3300 V, N-CHANNEL IGBT
Product Details Search Results:
Mitsubishichips.com/CM1200HB-66H
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"UNSPECIFIED","Channel Type":"N-CHANNEL","Terminal Form":"UNSPECIFIED","Package Style":"FLANGE MOUNT","Turn-off Time-Nom (toff)":"3500 ns","Collector-emitter Voltage-Max":"3300 V","Transistor Application":"POWER CONTROL","Turn-on Time-Nom (ton)":"3600 ns","Collector Current-Max (IC)":"1200 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Type":"INSULATED GATE BIPOLAR","...
1359 Bytes - 20:24:29, 12 January 2026
Powerint.com/1SD418F2-CM1200HB-66H
{"Packaging":"Bulk","Series":"1SD418","Brand":"Power Integrations","Product Category":"Power Management Modules","Manufacturer":"Power Integrations"}...
1136 Bytes - 20:24:29, 12 January 2026
Powerint.com/1SD536F2-CM1200HB-66H_OPT1
{"Rise Time":"15 ns","Product":"IGBT Drivers","Product Category":"Power Management Modules","Input Voltage MIN":"14.5 V","Dimensions":"193 mm x 50 mm","Output Current":"36 A","Series":"1SD536","Brand":"Power Integrations","Packaging":"Bulk","Input Voltage MAX":"15.5 V","Output Voltage":"-","Output Power":"5 W","Switching Frequency":"8.5 kHz","Minimum Operating Temperature":"- 40 C","Fall Time":"20 ns","Maximum Operating Temperature":"+ 85 C","Manufacturer":"Power Integrations"}...
1585 Bytes - 20:24:29, 12 January 2026
Pwrx.com/CM1200HB-66H
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"POWER MODULE-9","Terminal Form":"UNSPECIFIED","Package Style":"FLANGE MOUNT","Turn-off Time-Nom (toff)":"3500 ns","Collector-emitter Voltage-Max":"3300 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"1200 A","Turn-on Time-Nom (ton)":"1600 ns","Terminal Position":"UPPER","Transistor Type":"INSULATED GATE BIPOLAR","Package Shape":"RECTANGULAR","Con...
1269 Bytes - 20:24:29, 12 January 2026
