Product Datasheet Search Results:

BUK445-200A127.pdf5 Pages, 256 KB, Scan
BUK445-200A127
Nxp
7.6 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220

Product Details Search Results:

Nxp.com/BUK445-200A127
{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"100 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7.6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"30 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"200 V...
1465 Bytes - 11:04:11, 17 January 2026

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
LBA127L.pdf0.031Request
LCA127.pdf0.021Request
LAA127.pdf0.051Request
LBA127.pdf0.031Request
PAA127.pdf0.131Request
LAA127L.pdf0.051Request
LCA127L.pdf0.021Request
9LA1276-8DA00-7AA0.pdf0.731Request
9LA1276-8DA00-8BA0.pdf1.681Request
9LA1276-8DA00-1AC0.pdf1.681Request
9LA1276-8DA00-1AB0.pdf1.681Request
9LA1276-8DA00-1AE0.pdf1.681Request