Product Datasheet Search Results:

BSS8402DW.pdf5 Pages, 128 KB, Original
BSS8402DW-13.pdf5 Pages, 131 KB, Original
BSS8402DW-13
Diodes Incorporated
115 mA, 60 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
BSS8402DW-13-F.pdf7 Pages, 229 KB, Original
BSS8402DW-7.pdf7 Pages, 127 KB, Original
BSS8402DW-7
Diodes
MOSFET N+P 50,60V 130MA SC70-6 - BSS8402DW-7
BSS8402DW-7-F.pdf7 Pages, 127 KB, Original
BSS8402DW-7-F
Diodes
MOSFET ARRAY N/P-CHAN SC70-6 - BSS8402DW-7-F
BSS8402DWQ-13.pdf7 Pages, 229 KB, Original
BSS8402DWQ-13-F.pdf7 Pages, 120 KB, Original
BSS8402DWQ-7.pdf8 Pages, 454 KB, Original
BSS8402DW-7-F.pdf8 Pages, 462 KB, Original
BSS8402DW-7-F
Diodes Inc
Trans MOSFET N/P-CH 60V/50V 0.115A/0.13A 6-Pin SOT-363 T/R
BSS8402DW.pdf6 Pages, 126 KB, Original
BSS8402DW
Panjit Semiconductors
COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS

Product Details Search Results:

Diodes.com/BSS8402DW-13
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL AND P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transi...
1508 Bytes - 12:08:07, 12 October 2024
Diodes.com/BSS8402DW-13-F
{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL"}...
756 Bytes - 12:08:07, 12 October 2024
Diodes.com/BSS8402DW-7
907 Bytes - 12:08:07, 12 October 2024
Diodes.com/BSS8402DW-7-F
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Other Drawings":"SOT-363 Package Top SOT-363 Package Side 1 SOT-363 Package Side 2","Package / Case":"6-TSSOP, SC-88, SOT-363","Gate Charge (Qg) @ Vgs":"-","Rds On (Max) @ Id, Vgs":"7.5 Ohm @ 50mA, 5V","Product Photos":"SOT-363 PKG","PCN Design/Specification":"Green Encapsulate Change 09/July/2007 Bond Wire 3/May/2011","PCN Other":"Multiple Device Changes 29/Apr/2013","Datasheets":"BSS840...
2061 Bytes - 12:08:07, 12 October 2024
Diodes.com/BSS8402DWQ-13
{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL"}...
752 Bytes - 12:08:07, 12 October 2024
Diodes.com/BSS8402DWQ-13-F
{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL"}...
762 Bytes - 12:08:07, 12 October 2024
Diodes.com/BSS8402DWQ-7
894 Bytes - 12:08:07, 12 October 2024
Diodes.com/BSS8402DW-7-F
{"Polarity":"N/P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.115/0.13(A)","Mounting":"Surface Mount","Noise Figure":"Not Required dB","Drain-Source On-Volt":"60(V)","Frequency (Max)":"Not Required MHz","Pin Count":"6","Packaging":"Tape and Reel","Power Dissipation":"0.2(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOT-363","Output Power (Max)":"Not Required W","Rad Hardened":"No","Power ...
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Panjit.com.tw/BSS8402DW _R1 _00001
{"Category":"MOSFET","Maximum Drain Source Voltage":"60@Q 1|50@Q 2 V","Typical Turn-Off Delay Time":"20(Max)@Q 1|25@Q 2 ns","Description":"Value","Maximum Continuous Drain Current":"0.115@Q 1|0.13@Q 2 A","Package":"6SOT-363","Typical Turn-On Delay Time":"20(Max)@Q 1|7.5@Q 2 ns","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Channel Type":"N|P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"7000@10V@Q 1|10000@5V@Q 2 mOhm","Manufacturer":"Panjit"}...
1404 Bytes - 12:08:07, 12 October 2024
Panjit.com.tw/BSS8402DW_ R2 _00001
{"Category":"MOSFET","Maximum Drain Source Voltage":"60@Q 1|50@Q 2 V","Typical Turn-Off Delay Time":"20(Max)@Q 1|25@Q 2 ns","Description":"Value","Maximum Continuous Drain Current":"0.115@Q 1|0.13@Q 2 A","Package":"6SOT-363","Typical Turn-On Delay Time":"20(Max)@Q 1|7.5@Q 2 ns","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Channel Type":"N|P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"7000@10V@Q 1|10000@5V@Q 2 mOhm","Manufacturer":"Panjit"}...
1396 Bytes - 12:08:07, 12 October 2024
Panjit.com.tw/BSS8402DWT/R13
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","EU RoHS Compliant":"Yes","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL AND P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Br...
1580 Bytes - 12:08:07, 12 October 2024
Panjit.com.tw/BSS8402DWT/R13-R
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","EU RoHS Compliant":"Yes","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL AND P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Br...
1592 Bytes - 12:08:07, 12 October 2024