Product Datasheet Search Results:
14 Pages, 564 KB, Scan- BSO615N
- Infineon Technologies
- MOSFET 2N-CH 60V 2.6A 8SOIC
8 Pages, 511 KB, Original- BSO615N G
- Infineon Technologies
- N-Channel MOSFETs (20V - 250V); Package: PG-DSO-8; Package: SO-8; V<sub>DS</sub> (max): 60.0 V; R<sub>DS (on)</sub> (max) (@10V): -; R<sub>DS (on)</sub> (max) (@4.5V): 150.0 mOhm; I<sub>D </sub> (max): 2.6 A;
8 Pages, 502 KB, Original- BSO615NG
- Infineon Technologies
- Trans MOSFET N-CH 60V 2.6A 8-Pin SO
8 Pages, 502 KB, Original- BSO615NGHUMA1
- Infineon Technologies
- Trans MOSFET N-CH 60V 2.6A 8-Pin SO
8 Pages, 511 KB, Original- BSO615NGXT
- Infineon Technologies Ag
- 2.6 A, 60 V, 0.15 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
9 Pages, 549 KB, Original- BSO615NGXUMA1
- Infineon Technologies Ag
- Trans MOSFET N-CH 60V 2.6A Automotive 8-Pin DSO T/R
8 Pages, 511 KB, Original- BSO615NNT
- Infineon Technologies Ag
- 2.6 A, 60 V, 0.15 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
8 Pages, 107 KB, Original- BSO615NV
- Infineon Technologies
- SIPMOS Small-Signal-Transistor
7 Pages, 1068 KB, Original- BSO615N
- Siemens Semiconductors
- BSO615N
7 Pages, 1068 KB, Original- BSO615NV
- Siemens Semiconductors
- BSO615NV
Product Details Search Results:
Infineon.com/BSO615N
893 Bytes - 09:10:52, 12 January 2026
Infineon.com/BSO615N G
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2V @ 20\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"2.6A","Gate Charge (Qg) @ Vgs":"20nC @ 10V","Product Photos":"DSO-8","Rds On (Max) @ Id, Vgs":"150 mOhm @ 2.6A, 4.5V","Datasheets":"BSO 615NG","FET Type":"2 N-Channel (Dual)","PCN Packaging":"Dry Packing Box Update 24/Sep/2014","Drain to Source Voltage (Vdss)":"60V","Standard Package":"1","Online ...
1931 Bytes - 09:10:52, 12 January 2026
Infineon.com/BSO615NG
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Avalanche Energy Rating (Eas)":"60 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.6 A","EU RoHS Compliant":"Yes","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-M...
1561 Bytes - 09:10:52, 12 January 2026
Infineon.com/BSO615NGHUMA1
{"Product Category":"MOSFET","Series":"BSO615","Brand":"Infineon Technologies","Packaging":"Reel","Tradename":"OptiMOS","RoHS":"Details","Manufacturer":"Infineon"}...
1145 Bytes - 09:10:52, 12 January 2026
Infineon.com/BSO615NGXT
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"60 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.6 A","EU RoHS Compliant":"Yes","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10.4 A","Channel Type":"N-C...
1552 Bytes - 09:10:52, 12 January 2026
Infineon.com/BSO615NGXUMA1
{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"2.6(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Power Dissipation":"2(W)","Operating Temp Range":"-55C to 150C","Package Type":"DSO","Type":"Small Signal","Pin Count":"8","Number of Elements":"2"}...
1549 Bytes - 09:10:52, 12 January 2026
Infineon.com/BSO615NNT
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"60 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.6 A","EU RoHS Compliant":"Yes","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10.4 A","Channel Type":"N-C...
1543 Bytes - 09:10:52, 12 January 2026
Null/BSO615N G
1224 Bytes - 09:10:52, 12 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| BSO615NG.pdf | 0.50 | 1 | Request |
