Product Datasheet Search Results:
9 Pages, 211 KB, Original- BSM100GB120DN2
- Eupec Power Semiconductors
- IGBT Power Module
9 Pages, 195 KB, Original- BSM100GB120DN2K
- Eupec Power Semiconductors
- IGBT Power Module
11 Pages, 168 KB, Original- BSM100GB120DN2
- Infineon Technologies Ag
- 150 A, 1200 V, N-CHANNEL IGBT
11 Pages, 204 KB, Original- BSM100GB120DN2K
- Infineon Technologies
- IGBT Modules 1200V 100A DUAL
10 Pages, 211 KB, Original- BSM100GB120DN2KHOSA1
- Infineon Technologies Ag
- Trans IGBT Module N-CH 1200V 145A 700000mW 7-Pin 34MM-1
9 Pages, 132 KB, Original- BSM100GB120DN2
- Siemens Semiconductors
- IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
9 Pages, 114 KB, Original- BSM100GB120DN2K
- Siemens Semiconductors
- IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
Product Details Search Results:
Infineon.com/BSM100GB120DN2
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"HALF-BRIDGE 2, 7 PIN","Terminal Form":"UNSPECIFIED","Package Style":"FLANGE MOUNT","Turn-off Time-Nom (toff)":"470 ns","Collector-emitter Voltage-Max":"1200 V","Transistor Application":"POWER CONTROL","Turn-on Time-Nom (ton)":"210 ns","Collector Current-Max (IC)":"150 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Type":"INSULATED GAT...
1388 Bytes - 19:44:43, 15 January 2026
Infineon.com/BSM100GB120DN2K
{"Gate-Emitter Leakage Current":"400 nA","Continuous Collector Current at 25 C":"145 A","Product Category":"IGBT Modules","Factory Pack Quantity":"500","Brand":"Infineon Technologies","Pd - Power Dissipation":"700 W","Collector-Emitter Saturation Voltage":"2.5 V","Collector- Emitter Voltage VCEO Max":"1200 V","Product":"IGBT Silicon Modules","Mounting Style":"Screw","Maximum Gate Emitter Voltage":"20 V","Minimum Operating Temperature":"- 40 C","Package / Case":"Half Bridge1","Configuration":"Half Bridge","M...
1635 Bytes - 19:44:43, 15 January 2026
Infineon.com/BSM100GB120DN2KHOSA1
{"Collector Current (DC) ":"145(A)","Operating Temperature (Min)":"-40C","Mounting":"Screw","Operating Temperature (Max)":"150C","Gate to Emitter Voltage (Max)":"'\u00b120(V)","Channel Type":"N","Operating Temperature Classification":"AUTOMOTIVEC","Rad Hardened":"No","Package Type":"34MM-1","Configuration":"Dual","Pin Count":"7"}...
1493 Bytes - 19:44:43, 15 January 2026
