Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"42(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"75(V)","Packaging":"Rail/Tube","Power Dissipation":"110(W)","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Family":"FETs - Single","Product Photos":"TO-252-3","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Supplier Device Package":"D-PAK (TO-252AA)","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Datasheets":"AUIRFR2407","Rds On (Max) @ Id, Vgs":"26 mOhm @ 25A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power ...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"130 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"42 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0260 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"170 A","Channel Type":"N-CHAN...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Family":"FETs - Single","Product Photos":"TO-252-3","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Supplier Device Package":"D-PAK (TO-252AA)","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Datasheets":"AUIRFR2407","Rds On (Max) @ Id, Vgs":"26 mOhm @ 25A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"130 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"42 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0260 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"170 A","Channel Type":"N-CHAN...