Product Datasheet Search Results:
10 Pages, 414 KB, Original- AUIRF7341QTR
- Infineon Technologies Americas Corp.
- MOSFET 2N-CH 55V 5.1A 8SOIC
10 Pages, 414 KB, Original- AUIRF7341QTR
- International Rectifier
- MOSFET 2N-CH 55V 5.1A 8SOIC
10 Pages, 414 KB, Original- AUIRF7341QTR-EL
- International Rectifier
- Trans MOSFET N-CH 55V 5.1A 8-Pin SOIC N T/R
Product Details Search Results:
Infineon.com/AUIRF7341QTR
986 Bytes - 14:57:36, 15 January 2026
Irf.com/AUIRF7341QTR
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Family":"FETs - Arrays","Product Photos":"8-SOIC","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Series":"HEXFET\u00ae","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Supplier Device Package":"8-SO","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Datasheets":"AUIRF7341Q","Rds On (Max) @ Id, Vgs":"50 mOhm @ 5.1A, 10V","FET Type":"2 N-Channel (Dual)","Packaging":"Tape & Reel (TR)","Power - Max":"2.4...
1726 Bytes - 14:57:36, 15 January 2026
Irf.com/AUIRF7341QTR-EL
{"Category":"MOSFET","Maximum Drain Source Voltage":"55 V","Typical Rise Time":"7.7 ns","Typical Turn-Off Delay Time":"31 ns","Description":"Value","Maximum Continuous Drain Current":"5.1 A","Package":"8SOIC N","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"9.2 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 175 \u00b0C","RDS-on":"50@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"12.5 ns"}...
1390 Bytes - 14:57:36, 15 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 509-AUI-1-6P-137.pdf | 0.52 | 1 | Request |
