Product Datasheet Search Results:
4 Pages, 110 KB, Scan- 3SK225TE85R
- Toshiba America Electronic Components, Inc.
- UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
Product Details Search Results:
Toshiba.co.jp/3SK225TE85R
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Power Gain-Min (Gp)":"19 dB","Drain Current-Max (ID)":"0.0300 A","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"13.5 V","Transistor Application":"AMPLIFIER","Surface Mo...
1542 Bytes - 18:30:04, 15 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 3SK2942-2AA10.pdf | 13.76 | 1 | Request | |
| 3SK2112-2AA10.pdf | 13.76 | 1 | Request | |
| 3SK2611-3AA00.pdf | 13.76 | 1 | Request | |
| 3SK2511-1FA10.pdf | 13.76 | 1 | Request | |
| 3SK2122-1AA10.pdf | 13.76 | 1 | Request | |
| 3SK2941-2AA10.pdf | 13.76 | 1 | Request | |
| 3SK2112-1AA10.pdf | 13.76 | 1 | Request | |
| 3SK2511-2FA10.pdf | 13.76 | 1 | Request | |
| 3SK2122-2AA10.pdf | 13.76 | 1 | Request | |
| CA3SK20BD.pdf | 2.75 | 1 | Request | |
| CA3SK20JD.pdf | 2.75 | 1 | Request | |
| 3SK2942-2AA10.pdf | 13.76 | 1 | Request |
