Product Datasheet Search Results:
7 Pages, 275 KB, Original- 2SK4124
- On Semiconductor
- MOSFET N-CH 500V 20A TO-3PB
21 Pages, 870 KB, Original- 2SK41241E
- On Semiconductor
- 2SK41241E
7 Pages, 275 KB, Original- 2SK4124-1E
- On Semiconductor
- MOSFET N-CH 500V 20A
5 Pages, 57 KB, Original- 2SK4124
- Sanyo Electric Co., Ltd.
- 20 A, 500 V, 0.43 ohm, N-CHANNEL, Si, POWER, MOSFET
5 Pages, 48 KB, Original- 2SK4124
- Sanyo Semiconductor
- N-Channel Silicon MOSFET General-Purpose Switching Device
Product Details Search Results:
Onsemi.com/2SK4124
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-3P-3,TO-247-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"-","Input Capacitance (Ciss) @ Vds":"1200pF @ 30V","Series":"-","Standard Package":"100","Supplier Device Package":"TO-3PB","Catalog Drawings":"TO-3PB Package N-Channel Top","Datasheets":"2SK4124","Rds On (Max) @ Id, Vgs":"430 mOhm @ 8A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tray","Power - Max":"2.5W","Package / Case":"TO-3P-3, SC-65...
1549 Bytes - 08:41:58, 14 January 2026
Onsemi.com/2SK41241E
698 Bytes - 08:41:58, 14 January 2026
Onsemi.com/2SK4124-1E
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"-","Series":"-","Package / Case":"TO-3P-3, SC-65-3","Supplier Device Package":"TO-3P-3L","Datasheets":"2SK4124","Rds On (Max) @ Id, Vgs":"430 mOhm @ 8A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"2.5W","Standard Package":"30","Drain to Source Voltage (Vdss)":"500V","Current - Continuous Drain (Id) @ 25\u00b0C":"20A (Ta)","...
1375 Bytes - 08:41:58, 14 January 2026
Semiconductor-sanyo.com/2SK4124
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.5 W","Avalanche Energy Rating (Eas)":"124 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"20 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEM...
1482 Bytes - 08:41:58, 14 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK4115.pdf | 0.34 | 1 | Request |
