Product Datasheet Search Results:
4 Pages, 103 KB, Original- 2SK3593-01
- Fuji Electric Corp. Of America
- 40 A, 150 V, 0.041 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Fujielectric.co.jp/2SK3593-01
{"Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"387 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"40 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0410 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"160 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"150 V","Transisto...
1496 Bytes - 00:54:03, 12 January 2026
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK3593-01.pdf | 0.10 | 1 | Request |
