Product Details Search Results:
Toshiba.co.jp/2SK1365F
{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"7 A","Mounting":"Through Hole","Drain-Source On-Volt":"1000 V","Pin Count":"3 +Tab","Power Dissipation":"90 W","Operating Temp Range":"-55C to 150C","Package Type":"TO-3P(N)IS","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"1.8 ohm","Number of Elements":"1"}...
1452 Bytes - 21:54:01, 27 July 2026
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| File Name | File Size (MB) | Document | MOQ | Support |
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| 2SK1365.pdf | 0.39 | 1 | Request |
