Product Datasheet Search Results:
399 Pages, 2928 KB, Original- 2SK1284
- Nec Electronics
- Semiconductor Selection Guide
8 Pages, 380 KB, Scan- 2SK1284(JM)
- Nec Electronics
- N channel power MOS FET
8 Pages, 380 KB, Scan- 2SK1284-Z
- Nec Electronics
- Switching N-Channel Power MOS FET Industrial Use
8 Pages, 1988 KB, Original- 2SK1284
- Renesas Electronics
- 3000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA
8 Pages, 2068 KB, Original- 2SK1284-AZ
- Renesas Technology
- Trans MOSFET N-CH 100V 3A 3-Pin(3+Tab) TO-251
8 Pages, 1988 KB, Original- 2SK1284-Z
- Renesas Electronics
- 3000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
Product Details Search Results:
Renesas.com/2SK1284
{"Status":"DISCONTINUED","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"MP-3, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Package Style":"IN-LINE","Transistor Application":"SWITCHING","Operating Mode":"ENHANCEMENT","Drain Current-Max (ID)":"3 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNA...
1414 Bytes - 01:27:00, 11 January 2026
Renesas.com/2SK1284-AZ
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"3(A)","Mounting":"Through Hole","Drain-Source On-Volt":"100(V)","Power Dissipation":"1(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-251","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1452 Bytes - 01:27:00, 11 January 2026
Renesas.com/2SK1284-Z
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4000 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor Application":"SWITCHI...
1450 Bytes - 01:27:00, 11 January 2026
