Product Datasheet Search Results:
3 Pages, 326 KB, Original- 2N760
- Central Semiconductor
- NPN METAL-CAN SATURATED SWITCH / LOW NOISE LEVEL AMPLIFIER
5 Pages, 273 KB, Original- 2N760A
- Central Semiconductor Corp.
- 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18
5 Pages, 273 KB, Original- 2N760ALEADFREE
- Central Semiconductor Corp.
- 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18
1 Pages, 42 KB, Original- 2N760
- Crimson Semiconductor
- Transistor Selection Guide
1 Pages, 42 KB, Original- 2N760A
- Crimson Semiconductor
- Transistor Selection Guide
1 Pages, 113 KB, Scan- 2N760
- Motorola / Freescale Semiconductor
- Low Level and General Purpose Amplifiers
9 Pages, 197 KB, Original- 2N7606U3
- International Rectifier
- 22 A, 60 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
9 Pages, 192 KB, Original- 2N7607T3
- International Rectifier
- 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
9 Pages, 211 KB, Original- 2N7608T2
- International Rectifier
- 6 A, 100 V, 0.32 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
Product Details Search Results:
Centralsemi.com/2N760A
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"76","Collector-emitter Voltage-Max":"60 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"50 MHz","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","Number of Elements":"1"}...
1181 Bytes - 08:08:33, 13 January 2026
Centralsemi.com/2N760ALEADFREE
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN (315)","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"76","Collector-emitter Voltage-Max":"60 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"50 MHz","EU RoHS Compliant":"Yes","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals...
1282 Bytes - 08:08:33, 13 January 2026
Dla.mil/2N760A+JAN
{"V(CE)sat Max.(V)":"1.0","Absolute Max. Power Diss. (W)":"500m","V(BR)CBO (V)":"60","@V(CB) (V) (Test Condition)":"5.0","I(C) Abs.(A) Collector Current":"100m","@Freq. (Hz) (Test Condition)":"140k","I(CBO) Max. (A)":"100n","@V(CBO) (V) (Test Condition)":"30","Package":"TO-18","f(T) Min. (Hz) Transition Freq":"50M","@V(CE) (V) (Test Condition)":"5.0","@I(B) (A) (Test Condition)":"1.0m","V(BR)CEO (V)":"60","Military":"Y","Mil Number":"JAN2N760A","@I(C) (A) (Test Condition)":"1.0m","C(obo) (Max) (F)":"8.0p"}...
1020 Bytes - 08:08:33, 13 January 2026
Irf.com/2N7606U3
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"63 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"22 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0350 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"88 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUC...
1538 Bytes - 08:08:33, 13 January 2026
Irf.com/2N7607T3
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"98 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"20 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"80 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUC...
1510 Bytes - 08:08:33, 13 January 2026
Irf.com/2N7608T2
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, MODIFIED TO-39, 3 PIN","Pulsed Drain Current-Max (IDM)":"24 A","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Avalanche Energy Rating (Eas)":"37 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"6 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GE...
1432 Bytes - 08:08:33, 13 January 2026
Irf.com/2N7609U8
{"Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"21 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.5 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.2900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"26 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transis...
1494 Bytes - 08:08:33, 13 January 2026
N_a/2N760
{"Category":"NPN Transistor, Transistor","Amps":"0.1A","MHz":">50 MHz","Volts":"45V"}...
512 Bytes - 08:08:33, 13 January 2026
N_a/2N760(A,B)
{"Category":"NPN Transistor, Transistor","Amps":"0.1A","MHz":">50 MHz","Volts":"60V"}...
543 Bytes - 08:08:33, 13 January 2026
Ray.com/2N760AJ
{"V(CE)sat Max.(V)":"1.0","Absolute Max. Power Diss. (W)":"500m","V(BR)CBO (V)":"75","h(FE) Min. Static Current Gain":"76","Status":"Discontinued","I(C) Abs.(A) Collector Current":"100m","h(FE) Max. Current gain.":"333","I(CBO) Max. (A)":"100n","Package":"TO-18","f(T) Min. (Hz) Transition Freq":"60M","@V(CE) (V) (Test Condition)":"5.0","@I(B) (A) (Test Condition)":"1.0m","V(BR)CEO (V)":"60","Military":"N","@I(C) (A) (Test Condition)":"1.0m","C(obo) (Max) (F)":"6.0p"}...
944 Bytes - 08:08:33, 13 January 2026
Ssdi-power.com/2N760A
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"TO-18, 3 PIN","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"36","Collector-emitter Voltage-Max":"60 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"60 MHz","Collector Current-Max (IC)":"0.1000 A","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Number of Elements":"1","Transistor Type":"GENERAL PURPOSE...
1246 Bytes - 08:08:33, 13 January 2026
Various/2N760A
RLG, 2N760A, Silicon, NPN, 500mW, 60V, 60V, 8V, 100mA, 175°C, 50MHz, 10, 40MIN, ELN, TO18...
523 Bytes - 08:08:33, 13 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 7B07N760Y385G1.pdf | 0.04 | 1 | Request |
