Product Datasheet Search Results:

2N6898.pdf5 Pages, 253 KB, Scan
2N6898
Harris Semiconductor
Power MOSFET Data Book 1990
2N6898.pdf2 Pages, 176 KB, Original
2N6898
Microsemi Corp.
POWER, FET
2N6898JANTX.pdf1 Pages, 158 KB, Original
2N6898JANTX
Microsemi
Trans MOSFET P-CH 3-Pin(2+Tab) TO-3
2N6898JANTXV.pdf1 Pages, 166 KB, Original
2N6898JANTXV
Microsemi
Trans MOSFET P-CH 3-Pin(2+Tab) TO-3
2N6898TX.pdf4 Pages, 179 KB, Scan
2N6898TX
Microsemi Corp.
25 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE
2N6898TXV.pdf4 Pages, 179 KB, Scan
2N6898TXV
Microsemi Corp.
25 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE
2N6898.pdf1 Pages, 106 KB, Scan
2N6898
N/a
Shortform IC and Component Datasheets (Plus Cross Reference Data)
2N6898TX.pdf1 Pages, 31 KB, Original
2N6898TX
N/a
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
2N6898TXV.pdf1 Pages, 31 KB, Original
2N6898TXV
N/a
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.

Product Details Search Results:

Dla.mil/2N6898+JANTX
{"C(iss) Max. (F)":"3.0n","Absolute Max. Power Diss. (W)":"150","g(fs) Max, (S) Trans. conduct,":"16.0","I(D) Abs. Max.(A) Drain Curr.":"15.8","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"400n","r(DS)on Max. (Ohms)":"200m","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"4.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"16","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"4.0","V(GS)th Min. (V)":"2.0","Package":"TO-204AE","I(DSS) ...
1326 Bytes - 22:03:42, 13 January 2026
Dla.mil/2N6898+JANTXV
{"C(iss) Max. (F)":"3.0n","Absolute Max. Power Diss. (W)":"150","g(fs) Max, (S) Trans. conduct,":"16.0","I(D) Abs. Max.(A) Drain Curr.":"15.8","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"400n","r(DS)on Max. (Ohms)":"200m","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"4.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"16","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"4.0","V(GS)th Min. (V)":"2.0","Package":"TO-204AE","I(DSS) ...
1333 Bytes - 22:03:42, 13 January 2026
Microsemi.com/2N6898
{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE POWER"}...
689 Bytes - 22:03:42, 13 January 2026
Microsemi.com/2N6898JAN
{"Category":"MOSFET","Description":"Value","Package":"3TO-3","Mounting":"Through Hole","Channel Type":"P","RDS-on":"200@-100V mOhm","Manufacturer":"Microsemi"}...
948 Bytes - 22:03:42, 13 January 2026
Microsemi.com/2N6898JANTX
{"Category":"MOSFET","Description":"Value","Package":"3TO-3","Mounting":"Through Hole","Channel Type":"P","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"200@-100V mOhm","Manufacturer":"Microsemi"}...
1007 Bytes - 22:03:42, 13 January 2026
Microsemi.com/2N6898JANTXV
{"Category":"MOSFET","Description":"Value","Package":"3TO-3","Mounting":"Through Hole","Channel Type":"P","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"200@-100V mOhm","Manufacturer":"Microsemi"}...
1015 Bytes - 22:03:42, 13 January 2026
Microsemi.com/2N6898TX
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Pulsed Drain Current-Max (IDM)":"60 A","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"25 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","C...
1377 Bytes - 22:03:42, 13 January 2026
Microsemi.com/2N6898TXV
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Pulsed Drain Current-Max (IDM)":"60 A","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"25 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","C...
1383 Bytes - 22:03:42, 13 January 2026
Various/2N6898
{"C(iss) Max. (F)":"3.0n","Absolute Max. Power Diss. (W)":"150","g(fs) Max, (S) Trans. conduct,":"16.0","I(D) Abs. Max.(A) Drain Curr.":"15.8","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"400n","r(DS)on Max. (Ohms)":"200m","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"4.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"16","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"4.0","V(GS)th Min. (V)":"2.0","Package":"TO-204AE","I(DSS) ...
1222 Bytes - 22:03:42, 13 January 2026

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