Datasheet.Directory

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"UNSPECIFIED","Mfr Package Description":"GPR-1A, 2 PIN","Terminal Form":"WIRE","Package Style":"LONG FORM","Rep Pk Reverse Voltage-Max":"600 V","Diode Element Material":"SILICON","Average Forward Current-Max":"1 A","Case Connection":"ISOLATED","Terminal Position":"AXIAL","Diode Type":"SIGNAL DIODE","Package Shape":"ELLIPTICAL","Configuration":"SINGLE","Number of Terminals":"2","Reverse Recovery Time-Max":"2 us","Number of Elements":"1"}...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Terminal Form":"WIRE","Package Style":"LONG FORM","Rep Pk Reverse Voltage-Max":"600 V","Diode Element Material":"SILICON","Average Forward Current-Max":"1 A","Case Connection":"ISOLATED","Terminal Position":"AXIAL","Diode Type":"SIGNAL DIODE","Package Shape":"ELLIPTICAL","Configuration":"SINGLE","Number of Terminals":"2","Number of Elements":"1"}...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN (315)","Package Body Material":"UNSPECIFIED","Mfr Package Description":"GPR-1A, 2 PIN","Terminal Form":"WIRE","Package Style":"LONG FORM","Rep Pk Reverse Voltage-Max":"600 V","Diode Element Material":"SILICON","Average Forward Current-Max":"1 A","Case Connection":"ISOLATED","EU RoHS Compliant":"Yes","Terminal Position":"AXIAL","Diode Type":"SIGNAL DIODE","Package Shape":"ELLIPTICAL","Configuration":"SINGLE","Number of Terminals":"2","Reverse ...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Terminal Form":"WIRE","Package Style":"LONG FORM","Rep Pk Reverse Voltage-Max":"600 V","Diode Element Material":"SILICON","Average Forward Current-Max":"1 A","Case Connection":"ISOLATED","Terminal Position":"AXIAL","Diode Type":"SIGNAL DIODE","Package Shape":"ELLIPTICAL","Configuration":"SINGLE","Number of Terminals":"2","Number of Elements":"1"}...

{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"50","I(O) Max.(A) Output Current":"1","@I(R) (A) (Test Condition)":"1","V(FM) Max.(V) Forward Voltage":"1.2","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"600","V(RRM)(V) Rep.Pk.Rev. Voltage":"600","Package":"DO-204AP","I(RM) Max.(A) Pk. Rev. Current":"25u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JAN1N5618","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"2u","@Temp (°C) (Test Condition)":"55","I(RM) M...

{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"50","I(O) Max.(A) Output Current":"1","@I(R) (A) (Test Condition)":"1","V(FM) Max.(V) Forward Voltage":"1.2","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"600","V(RRM)(V) Rep.Pk.Rev. Voltage":"600","Package":"DO-204AP","I(RM) Max.(A) Pk. Rev. Current":"25u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANTX1N5618","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"2u","@Temp (°C) (Test Condition)":"55","I(RM)...

{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"50","I(O) Max.(A) Output Current":"1","@I(R) (A) (Test Condition)":"1","V(FM) Max.(V) Forward Voltage":"1.2","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"600","V(RRM)(V) Rep.Pk.Rev. Voltage":"600","Package":"DO-204AP","I(RM) Max.(A) Pk. Rev. Current":"25u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANTXV1N5618","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"2u","@Temp (°C) (Test Condition)":"55","I(RM...

{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.3","Package":"DO-213AB","I(O) Max.(A) Output Current":"1.0","I(RM) Max.(A) Reverse Current":"500n","@V(R) (V)(Test Condition)":"600","V(RRM)(V) Rep.Pk.Rev. Voltage":"600","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"3.0","Mil Number":"JAN1N5618US","@I(R) (A) (Test Condition)":"1.0"}...

{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.3","Package":"DO-213AB","I(O) Max.(A) Output Current":"1.0","I(RM) Max.(A) Reverse Current":"500n","@V(R) (V)(Test Condition)":"600","V(RRM)(V) Rep.Pk.Rev. Voltage":"600","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"3.0","Mil Number":"JANS1N5618US","@I(R) (A) (Test Condition)":"1.0"}...

{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.3","Package":"DO-213AB","I(O) Max.(A) Output Current":"1.0","I(RM) Max.(A) Reverse Current":"500n","@V(R) (V)(Test Condition)":"600","V(RRM)(V) Rep.Pk.Rev. Voltage":"600","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"3.0","Mil Number":"JANTX1N5618US","@I(R) (A) (Test Condition)":"1.0"}...

{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.3","Package":"DO-213AB","I(O) Max.(A) Output Current":"1.0","I(RM) Max.(A) Reverse Current":"500n","@V(R) (V)(Test Condition)":"600","V(RRM)(V) Rep.Pk.Rev. Voltage":"600","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"3.0","Mil Number":"JANTXV1N5618US","@I(R) (A) (Test Condition)":"1.0"}...

{"Temperature, Junction, Maximum":"+175 \u00b0C","Current, Reverse":"25 \u03bcA","Transistor Type":"Glass Passivated Junction Rectifier","Mounting Type":"PCB Mount","Thermal Resistance, Junction to Ambient":"45 \u00b0C\u2044W (Typ.)","Temperature, Junction, Minimum":"-65 \u00b0C","Temperature, Soldering":"350 \u00b0C","Voltage, Forward":"1.2 V","Primary Type":"Rectifier","Speed, Switching":"Standard","Package Type":"DO-240AC (DO-15)","Capacitance, Junction":"25 pF","Current, Surge":"50 A","Time, Recovery":"...