Product Datasheet Search Results:
- 1N5552US+JAN
- Defense Electronics Supply Center
- 3.0A Iout, 600V Vrrm Fast Recovery Rectifier
- 1N5552US+JANS
- Defense Electronics Supply Center
- 3.0A Iout, 600V Vrrm Fast Recovery Rectifier
- 1N5552US+JANTX
- Defense Electronics Supply Center
- 3.0A Iout, 600V Vrrm Fast Recovery Rectifier
- 1N5552US+JANTXV
- Defense Electronics Supply Center
- 3.0A Iout, 600V Vrrm Fast Recovery Rectifier
- 1N5552US+JANTX
- Microsemi
- Diode Switching 600V 5A 2-Pin E-MELF
Product Details Search Results:
Dla.mil/1N5552US+JAN
{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.2","Package":"DO-213AB","I(O) Max.(A) Output Current":"3.0","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"600","V(RRM)(V) Rep.Pk.Rev. Voltage":"600","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"9.0","Mil Number":"JAN1N5552US","@I(R) (A) (Test Condition)":"1.0"}...
1041 Bytes - 18:44:02, 17 January 2026
Dla.mil/1N5552US+JANS
{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.2","Package":"DO-213AB","I(O) Max.(A) Output Current":"3.0","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"600","V(RRM)(V) Rep.Pk.Rev. Voltage":"600","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"9.0","Mil Number":"JANS1N5552US","@I(R) (A) (Test Condition)":"1.0"}...
1047 Bytes - 18:44:02, 17 January 2026
Dla.mil/1N5552US+JANTX
{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.2","Package":"DO-213AB","I(O) Max.(A) Output Current":"3.0","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"600","V(RRM)(V) Rep.Pk.Rev. Voltage":"600","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"9.0","Mil Number":"JANTX1N5552US","@I(R) (A) (Test Condition)":"1.0"}...
1053 Bytes - 18:44:02, 17 January 2026
Dla.mil/1N5552US+JANTXV
{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.2","Package":"DO-213AB","I(O) Max.(A) Output Current":"3.0","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"600","V(RRM)(V) Rep.Pk.Rev. Voltage":"600","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"9.0","Mil Number":"JANTXV1N5552US","@I(R) (A) (Test Condition)":"1.0"}...
1060 Bytes - 18:44:02, 17 January 2026
Microsemi.com/1N5552US+JANTX
{"Peak Rep Rev Volt":"600 V","Avg. Forward Curr (Max)":"5","Peak Non-Repetitive Surge Current":"100 A","Rectifier Type":"Switching Diode","Mounting":"Surface Mount","Rad Hardened":"No","Forward Voltage":"1.2 V","Operating Temperature Classification":"Military","Operating Temp Range":"-65C to 175C","Rev Recov Time":"2000 ns","Package Type":"E-MELF","Rev Curr":"1 uA","Configuration":"Single","Pin Count":"2"}...
1130 Bytes - 18:44:02, 17 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2TCZ182001N5530.pdf | 0.07 | 1 | Request | |
| 2TCZ162011N5530.pdf | 0.09 | 1 | Request | |
| 2TCZ162001N5530.pdf | 0.07 | 1 | Request | |
| 2TCZ152011N5530.pdf | 0.07 | 1 | Request | |
| 2TCZ152001N5530.pdf | 0.07 | 1 | Request |








