Product Datasheet Search Results:

1N5552US+JAN.pdf21 Pages, 553 KB, Scan
1N5552US+JAN
Defense Electronics Supply Center
3.0A Iout, 600V Vrrm Fast Recovery Rectifier
1N5552US+JANS.pdf21 Pages, 553 KB, Scan
1N5552US+JANS
Defense Electronics Supply Center
3.0A Iout, 600V Vrrm Fast Recovery Rectifier
1N5552US+JANTX.pdf21 Pages, 553 KB, Scan
1N5552US+JANTX
Defense Electronics Supply Center
3.0A Iout, 600V Vrrm Fast Recovery Rectifier
1N5552US+JANTXV.pdf21 Pages, 553 KB, Scan
1N5552US+JANTXV
Defense Electronics Supply Center
3.0A Iout, 600V Vrrm Fast Recovery Rectifier
1N5552US+JANTX.pdf6 Pages, 199 KB, Original
1N5552US+JANTX
Microsemi
Diode Switching 600V 5A 2-Pin E-MELF

Product Details Search Results:

Dla.mil/1N5552US+JAN
{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.2","Package":"DO-213AB","I(O) Max.(A) Output Current":"3.0","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"600","V(RRM)(V) Rep.Pk.Rev. Voltage":"600","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"9.0","Mil Number":"JAN1N5552US","@I(R) (A) (Test Condition)":"1.0"}...
1041 Bytes - 18:44:02, 17 January 2026
Dla.mil/1N5552US+JANS
{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.2","Package":"DO-213AB","I(O) Max.(A) Output Current":"3.0","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"600","V(RRM)(V) Rep.Pk.Rev. Voltage":"600","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"9.0","Mil Number":"JANS1N5552US","@I(R) (A) (Test Condition)":"1.0"}...
1047 Bytes - 18:44:02, 17 January 2026
Dla.mil/1N5552US+JANTX
{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.2","Package":"DO-213AB","I(O) Max.(A) Output Current":"3.0","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"600","V(RRM)(V) Rep.Pk.Rev. Voltage":"600","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"9.0","Mil Number":"JANTX1N5552US","@I(R) (A) (Test Condition)":"1.0"}...
1053 Bytes - 18:44:02, 17 January 2026
Dla.mil/1N5552US+JANTXV
{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.2","Package":"DO-213AB","I(O) Max.(A) Output Current":"3.0","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"600","V(RRM)(V) Rep.Pk.Rev. Voltage":"600","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"9.0","Mil Number":"JANTXV1N5552US","@I(R) (A) (Test Condition)":"1.0"}...
1060 Bytes - 18:44:02, 17 January 2026
Microsemi.com/1N5552US+JANTX
{"Peak Rep Rev Volt":"600 V","Avg. Forward Curr (Max)":"5","Peak Non-Repetitive Surge Current":"100 A","Rectifier Type":"Switching Diode","Mounting":"Surface Mount","Rad Hardened":"No","Forward Voltage":"1.2 V","Operating Temperature Classification":"Military","Operating Temp Range":"-65C to 175C","Rev Recov Time":"2000 ns","Package Type":"E-MELF","Rev Curr":"1 uA","Configuration":"Single","Pin Count":"2"}...
1130 Bytes - 18:44:02, 17 January 2026

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