Product Datasheet Search Results:

1N4793.pdf1 Pages, 57 KB, Scan
1N4793
Api Electronics Group
27 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
1N4793A.pdf1 Pages, 57 KB, Scan
1N4793A
Api Electronics Group
27 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
1N4793B.pdf1 Pages, 57 KB, Scan
1N4793B
Api Electronics Group
27 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
1N4793C.pdf1 Pages, 57 KB, Scan
1N4793C
Api Electronics Group
27 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
1N4793.pdf2 Pages, 151 KB, Original
1N4793
Codi Semiconductor, Inc.
Voltage-Variable Capacitance (Tuning) Diodes
1N4793A.pdf2 Pages, 151 KB, Original
1N4793A
Codi Semiconductor, Inc.
Voltage-Variable Capacitance (Tuning) Diodes
1N4793B.pdf2 Pages, 151 KB, Original
1N4793B
Codi Semiconductor, Inc.
Voltage-Variable Capacitance (Tuning) Diodes
1N4793C.pdf2 Pages, 151 KB, Original
1N4793C
Codi Semiconductor, Inc.
Voltage-Variable Capacitance (Tuning) Diodes
1N4793D.pdf2 Pages, 151 KB, Original
1N4793D
Codi Semiconductor, Inc.
Voltage-Variable Capacitance (Tuning) Diodes
1N4793.pdf2 Pages, 112 KB, Scan
1N4793
Crystalonics
Voltage Variable Capacitance Diodes Data Book 1976
1N4793.pdf1 Pages, 48 KB, Scan
1N4793
Eastron Corp.
Capacitance Varactor Diode, TO-7
1N4793A.pdf1 Pages, 48 KB, Original
1N4793A
Eastron Corp.
Voltage Variable Capacitor

Product Details Search Results:

Apitech.com/1N4793
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.02","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"20 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"27 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"15","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"RO...
1270 Bytes - 16:33:34, 11 January 2026
Apitech.com/1N4793A
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.02","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"10 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"27 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"15","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"RO...
1280 Bytes - 16:33:34, 11 January 2026
Apitech.com/1N4793B
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.02","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"27 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"15","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROU...
1278 Bytes - 16:33:34, 11 January 2026
Apitech.com/1N4793C
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.02","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"2 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"27 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"15","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROU...
1279 Bytes - 16:33:34, 11 January 2026
Various/1N4793
{"C1/C2 Min. Capacitance Ratio":"2.46","V(RRM)(V) Rep.Pk.Rev. Voltage":"20","Semiconductor Material":"Silicon","@V(Q min)(V) (Test Condition)":"4.0","P(D) Max.(W) Power Dissipation":"500m","Package":"DO-14","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"27p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","Q Factor Min.":"15"}...
831 Bytes - 16:33:34, 11 January 2026
Various/1N4793A
{"C1/C2 Min. Capacitance Ratio":"2.46","V(RRM)(V) Rep.Pk.Rev. Voltage":"20","Semiconductor Material":"Silicon","@V(Q min)(V) (Test Condition)":"4.0","P(D) Max.(W) Power Dissipation":"500m","Package":"DO-14","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"27p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","Q Factor Min.":"15"}...
836 Bytes - 16:33:34, 11 January 2026
Various/1N4793B
{"C1/C2 Min. Capacitance Ratio":"2.46","V(RRM)(V) Rep.Pk.Rev. Voltage":"20","Semiconductor Material":"Silicon","@V(Q min)(V) (Test Condition)":"4.0","P(D) Max.(W) Power Dissipation":"500m","Package":"DO-14","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"27p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","Q Factor Min.":"15"}...
836 Bytes - 16:33:34, 11 January 2026
Various/1N4793C
{"C1/C2 Min. Capacitance Ratio":"2.46","V(RRM)(V) Rep.Pk.Rev. Voltage":"20","Semiconductor Material":"Silicon","@V(Q min)(V) (Test Condition)":"4.0","P(D) Max.(W) Power Dissipation":"500m","Package":"DO-14","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"27p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","Q Factor Min.":"15"}...
836 Bytes - 16:33:34, 11 January 2026
Various/1N4793D
{"C1/C2 Min. Capacitance Ratio":"2.46","V(RRM)(V) Rep.Pk.Rev. Voltage":"20","Semiconductor Material":"Silicon","@V(Q min)(V) (Test Condition)":"4.0","P(D) Max.(W) Power Dissipation":"500m","Package":"DO-14","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"27p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","Q Factor Min.":"15"}...
836 Bytes - 16:33:34, 11 January 2026

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