Product Datasheet Search Results:

IRFP064N-207.pdf5 Pages, 266 KB, Scan
IRFP064N-207
International Rectifier
110 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET
IRFP064N-207PBF.pdf5 Pages, 266 KB, Scan
IRFP064N-207PBF
International Rectifier
110 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Irf.com/IRFP064N-207
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"480 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"110 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0080 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"390 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTO...
1474 Bytes - 07:00:58, 01 November 2024
Irf.com/IRFP064N-207PBF
{"Terminal Finish":"TIN NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"480 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"110 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0080 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"390 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXID...
1509 Bytes - 07:00:58, 01 November 2024

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