Product Datasheet Search Results:
- GS66508T-E02-TY
- Gan Systems
- MOSFET Top cooled 650V GaN Transistor
Product Details Search Results:
Gansystems.com/GS66508T-E02-TY
{"Mounting Style":"SMD/SMT","Vds - Drain-Source Breakdown Voltage":"650 V","Transistor Polarity":"N-Channel","Rds On - Drain-Source Resistance":"55 mOhms","Channel Mode":"Enhancement","Maximum Operating Temperature":"+ 150 C","Brand":"GaN Systems","Id - Continuous Drain Current":"30 A","Vgs th - Gate-Source Threshold Voltage":"1.6 V","Packaging":"Tray","Product Category":"MOSFET","Qg - Gate Charge":"6.5 nC","Vgs - Gate-Source Breakdown Voltage":"10 V","Configuration":"Single","Technology":"GaN","Minimum Ope...
1563 Bytes - 07:54:06, 01 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
MBM150GS6AW.pdf | 0.09 | 1 | Request | |
MBB200GS6AW.pdf | 0.15 | 1 | Request | |
MBM300GS6AW.pdf | 0.09 | 1 | Request | |
MBN200GS6AW.pdf | 0.09 | 1 | Request | |
MBN400GS6AW.pdf | 0.32 | 1 | Request | |
MBM600GS6CW.pdf | 0.10 | 1 | Request | |
MBN300GS6AW.pdf | 0.08 | 1 | Request | |
MBM400GS6AW.pdf | 0.09 | 1 | Request | |
MBM200GS6AW.pdf | 0.09 | 1 | Request | |
ERG1FGS620D.pdf | 0.92 | 1 | Request | |
ERG1FGS683D.pdf | 0.92 | 1 | Request | |
ERG1FGS621D.pdf | 0.92 | 1 | Request |