Product Datasheet Search Results:
- BUK445-200B127
- Nxp
- 7 A, 200 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
Product Details Search Results:
Nxp.com/BUK445-200B127
{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"100 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"28 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"200 V",...
1460 Bytes - 03:42:11, 11 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
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FE_B1279DEF.pdf | 1.55 | 1 | Request | |
LBB127.pdf | 0.04 | 1 | Request | |
LCB127.pdf | 0.04 | 1 | Request | |
B43252B1277M000.pdf | 0.70 | 1 | Request | |
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