Product Details Search Results:
Multicomp/BAS70-04.
{"Peak Rep Rev Volt":"70(V)","Peak Non-Repetitive Surge Current":"0.6(A)","Peak Reverse Recovery Time":"5(ns)","Maximum Forward Current":"200(mA)","Product Height (mm)":"1(mm)","Rad Hardened":"No","Peak Reverse Current":"0.1(uA)","Rectifier Type":"Schottky Diode","Operating Temp Range":"-55C to 200C","Package Type":"SOT-23","Mounting":"Surface Mount","Power Dissipation (Max)":"200(mW)","Peak Forward Voltage":"1(V)","Configuration":"Dual Series","Pin Count":"3"}...
1390 Bytes - 08:09:37, 01 November 2024
Multicomp.com.au/BAS70-04.
{"Diode Configuration:":"Dual Series","Forward Current If(AV):":"70 mA","Diode Case Style:":"SOT-23","No. of Pins:":"3","Forward Voltage VF Max:":"1 V","Operating Temperature Max:":"150 \u00b0C","Repetitive Reverse Voltage Vrrm Max:":"70 V","Forward Surge Current Ifsm Max:":"100 mA","Packaging:":"Cut Tape","SVHC:":"No SVHC (15-Jun-2015)"}...
1261 Bytes - 08:09:37, 01 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
FUSE_BASES_OFAZ_BASELINE_JULY_2024.pdf | 28.15 | 1 | Request | |
DS_DDR3_4GB_B_DIE_BASED_1_35V_RDIMM.pdf | 1.56 | 1 | Request | |
SAMSUNG_Z_SSD_AND_SCYLLADB_DELIVERING_LOW_LATENCY_AND_MULTI_TERABYTE_CAPACITY_IN_A_PERSISTENT_DATABASE.pdf | 1.99 | 1 | Request | |
DS_DDR3_1GB_G_DIE_BASED_VLP_RDIMM.pdf | 1.32 | 1 | Request | |
DS_DDR3_1GB_D_DIE_BASED_RDIMM.pdf | 1.46 | 1 | Request | |
DS_DDR3_2GB_E_DIE_BASED_RDIMM.pdf | 1.43 | 1 | Request | |
DS_DDR3_4GB_A_DIE_BASED_1_35V_RDIMM.pdf | 1.32 | 1 | Request | |
DS_DDR3_4GB_B_DIE_BASED_RDIMM.pdf | 1.63 | 1 | Request | |
DS_DDR3_4GB_A_DIE_BASED_RDIMM.pdf | 1.27 | 1 | Request | |
DS_DDR3_2GB_B_DIE_BASED_RDIMM.pdf | 1.18 | 1 | Request | |
DS_DDR3_4GB_B_DIE_BASED_1_35V_VLP_RDIMM.pdf | 1.54 | 1 | Request | |
DS_DDR3_2GB_C_DIE_BASED_1_35V_RDIMM.pdf | 1.54 | 1 | Request |