MMARY Pin Definition: 1. Source 2. Gate 3. Drain VDS (V) 60 Features RDS(on)() ID (mA) 5 @ VGS = 10V 100 5.5 @ VGS = 5V 100 Block Diagram Low On-Resistance ESD Protection High Speed Switching Low Voltage Drive Ordering Information Part No. Package Packing TSM2N7000KCT B0 TSM2N7000KCT A3 TO-92 TO-92 1Kpcs / Bulk 2Kpcs / Ammo N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V Continuous @ TA=25C ID 300 Pulsed IDM 700 Continuous @ TA=25C IDR 300 Pulsed IDMR 700 Maximum Power Dissipation PD 400 Operating Junction Temperature TJ +150 o TJ, TSTG -55 to +150 o Symbol Limit Unit TL 10 S RJA 357 C/W Drain Current Drain Reverse Current Operating Junction and Storage Temperature Range mA mA mW C C Thermal Performance Parameter Lead Temperature (1/8" from case) Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surf
MOSFET TO-92 PRODUCT SUMMARY Pin Definition: 1. Source 2. Gate 3. Drain VDS (V) 60 Features RDS(on)() ID (mA) 5 @ VGS = 10V 100 5.5 @ VGS = 5V 100 Low On-Resistance ESD Protection High Speed Switching Low Voltage Drive Ordering Information Package Packing TSM2N7000KCT B0G TSM2N7000KCT A3G TO-92 TO-92 1Kpcs / Bulk 2Kpcs / Ammo mm Part No. en de d Block Diagram Note: "G" denotes for Halogen Free N-Channel MOSFET Parameter eco Absolute Maximum Rating (Ta = 25C unless otherwise noted) Symbol Limit Unit VDS 60 V VGS 20 V Continuous @ TA=25C ID 300 Pulsed IDM 700 Continuous @ TA=25C IDR 300 Pulsed IDMR 700 Maximum Power Dissipation PD 400 mW Operating Junction Temperature TJ +150 C TJ, TSTG -55 to +150 C Symbol Limit Unit TL 10 S RJA 357 C/W Drain-Source Voltage tR Gate-Source Voltage Drain Current No Drain Reverse Current Operating Junction and Storage Temperature Range mA mA Thermal Performance Parameter Lead Temperature (1/8" from case) Junction to Ambient Thermal Resistance (PCB mounte
MMARY VDS (V) RDS(on)() Pin Definition: 1. Source 2. Gate 3. Drain 60 Features ID (mA) 5 @ VGS = 10V 100 5.5 @ VGS = 5V 100 Block Diagram Low On-Resistance ESD Protection High Speed Switching Low Voltage Drive Ordering Information Part No. Package Packing TSM2N7000KCT B0 TO-92 1Kpcs / Bulk TSM2N7000KCT A3 TO-92 2Kpcs / Ammo N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V Continuous @ TA=25C ID 300 Pulsed IDM 700 Continuous @ TA=25C IDR 300 Pulsed IDMR 700 Maximum Power Dissipation PD 400 Operating Junction Temperature TJ +150 o C TJ, TSTG -55 to +150 o C Symbol Limit Unit TL 10 S RJA 357 C/W Drain Current Drain Reverse Current Operating Junction and Storage Temperature Range mA mA mW Thermal Performance Parameter Lead Temperature (1/8" from case) Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surf
MMARY Pin Definition: 1. Source 2. Gate 3. Drain VDS (V) 60 Features RDS(on)() ID (mA) 5 @ VGS = 10V 100 5.5 @ VGS = 5V 100 Block Diagram Low On-Resistance ESD Protection High Speed Switching Low Voltage Drive Ordering Information Part No. Package Packing TSM2N7000KCT B0 TSM2N7000KCT A3 TO-92 TO-92 1Kpcs / Bulk 2Kpcs / Ammo N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V Continuous @ TA=25C ID 300 Pulsed IDM 700 Continuous @ TA=25C IDR 300 Pulsed IDMR 700 Maximum Power Dissipation PD 400 Operating Junction Temperature TJ +150 o TJ, TSTG -55 to +150 o Symbol Limit Unit TL 10 S RJA 357 C/W Drain Current Drain Reverse Current Operating Junction and Storage Temperature Range mA mA mW C C Thermal Performance Parameter Lead Temperature (1/8" from case) Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surf
MMARY Pin Definition: 1. Source 2. Gate 3. Drain VDS (V) 60 Features Low On-Resistance ESD Protection High Speed Switching Low Voltage Drive RDS(on)() ID (mA) 5 @ VGS = 10V 100 5.5 @ VGS = 5V 100 Block Diagram Ordering Information Part No. Package Packing TSM2N7000KCT B0G TSM2N7000KCT A3G TO-92 TO-92 1Kpcs / Bulk 2Kpcs / Ammo Note: "G" denotes for Halogen Free N-Channel MOSFET Absolute Maximum Rating (Ta = 25C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V Continuous @ TA=25C ID 300 Pulsed IDM 700 Continuous @ TA=25C IDR 300 Pulsed IDMR 700 Maximum Power Dissipation PD 400 mW Operating Junction Temperature TJ +150 C TJ, TSTG -55 to +150 C Symbol Limit Unit TL 10 S RJA 357 C/W Drain Current Drain Reverse Current Operating Junction and Storage Temperature Range mA mA Thermal Performance Parameter Lead Temperature (1/8" from case) Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maxi