irective 2002/95/EC APPLICATIONS S 3.30 mm 3.30 mm 1 S 2 * Active Clamp in Intermediate DC/DC Power Supplies * H-Bridge High Side Switch for Lighting Application S 3 G 4 S D 8 D 7 D 6 D G 5 Bottom View Ordering Information: Si7115DN-T1-E3 (Lead (Pb)-free) SI7115DN-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET D ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 C TC = 70 C TA = 25 C TA = 70 C Continuous Drain Current (TJ = 150 C) ID IDM Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 C TA = 25 C IS Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 C TC = 70 C TA = 25 C TA = 70 C PD Operating Junction and Storage Temperature Range TJ, Tstg Limit - 150 20 - 8.9 - 7.1 Unit V - 2.3a, b - 1.9a, b - 15 - 13 A - 3a, b 15 11.25 52 33 mJ 3.7a, b 2.4a, b - 50 to 150 260 W C Soldering Recommendations (Peak Temperature) Notes: a. Surface mounted
irective 2002/95/EC APPLICATIONS S 3.30 mm 3.30 mm 1 S 2 * Active Clamp in Intermediate DC/DC Power Supplies * H-Bridge High Side Switch for Lighting Application S 3 G 4 S D 8 D 7 D 6 D G 5 Bottom View Ordering Information: Si7115DN-T1-E3 (Lead (Pb)-free) SI7115DN-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET D ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 C TC = 70 C TA = 25 C TA = 70 C Continuous Drain Current (TJ = 150 C) ID IDM Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 C TA = 25 C IS Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 C TC = 70 C TA = 25 C TA = 70 C PD Operating Junction and Storage Temperature Range TJ, Tstg Limit - 150 20 - 8.9 - 7.1 Unit V - 2.3a, b - 1.9a, b - 15 - 13 A - 3a, b 15 11.25 52 33 mJ 3.7a, b 2.4a, b - 50 to 150 260 W C Soldering Recommendations (Peak Temperature) Notes: a. Surface mounted
irective 2002/95/EC APPLICATIONS S 3.30 mm 3.30 mm 1 S 2 * Active Clamp in Intermediate DC/DC Power Supplies * H-Bridge High Side Switch for Lighting Application S 3 G 4 S D 8 D 7 D 6 D G 5 Bottom View Ordering Information: Si7115DN-T1-E3 (Lead (Pb)-free) SI7115DN-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET D ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 C TC = 70 C TA = 25 C TA = 70 C Continuous Drain Current (TJ = 150 C) ID IDM Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 C TA = 25 C IS Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 C TC = 70 C TA = 25 C TA = 70 C PD Operating Junction and Storage Temperature Range TJ, Tstg Limit - 150 20 - 8.9 - 7.1 Unit V - 2.3a, b - 1.9a, b - 15 - 13 A - 3a, b 15 11.25 52 33 mJ 3.7a, b 2.4a, b - 50 to 150 260 W C Soldering Recommendations (Peak Temperature) Notes: a. Surface mounted
irective 2002/95/EC APPLICATIONS S 3.30 mm 3.30 mm 1 S 2 * Active Clamp in Intermediate DC/DC Power Supplies * H-Bridge High Side Switch for Lighting Application S 3 G 4 S D 8 D 7 D 6 D G 5 Bottom View Ordering Information: Si7115DN-T1-E3 (Lead (Pb)-free) SI7115DN-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET D ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 C TC = 70 C TA = 25 C TA = 70 C Continuous Drain Current (TJ = 150 C) ID IDM Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 C TA = 25 C IS Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 C TC = 70 C TA = 25 C TA = 70 C PD Operating Junction and Storage Temperature Range TJ, Tstg Limit - 150 20 - 8.9 - 7.1 Unit V - 2.3a, b - 1.9a, b - 15 - 13 A - 3a, b 15 11.25 52 33 mJ 3.7a, b 2.4a, b - 50 to 150 260 W C Soldering Recommendations (Peak Temperature) Notes: a. Surface mounted
irective 2002/95/EC APPLICATIONS S 3.30 mm 3.30 mm 1 S 2 * Active Clamp in Intermediate DC/DC Power Supplies * H-Bridge High Side Switch for Lighting Application S 3 G 4 S D 8 D 7 D 6 D G 5 Bottom View Ordering Information: Si7115DN-T1-E3 (Lead (Pb)-free) SI7115DN-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET D ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 C TC = 70 C TA = 25 C TA = 70 C Continuous Drain Current (TJ = 150 C) ID IDM Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 C TA = 25 C IS Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 C TC = 70 C TA = 25 C TA = 70 C PD Operating Junction and Storage Temperature Range TJ, Tstg Limit - 150 20 - 8.9 - 7.1 Unit V - 2.3a, b - 1.9a, b - 15 - 13 A - 3a, b 15 11.25 52 33 mJ 3.7a, b 2.4a, b - 50 to 150 260 W C Soldering Recommendations (Peak Temperature) Notes: a. Surface mounted
irective 2002/95/EC APPLICATIONS S 3.30 mm 3.30 mm 1 S 2 * Active Clamp in Intermediate DC/DC Power Supplies * H-Bridge High Side Switch for Lighting Application S 3 G 4 S D 8 D 7 D 6 D G 5 Bottom View Ordering Information: Si7115DN-T1-E3 (Lead (Pb)-free) SI7115DN-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET D ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 C TC = 70 C TA = 25 C TA = 70 C Continuous Drain Current (TJ = 150 C) ID IDM Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 C TA = 25 C IS Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 C TC = 70 C TA = 25 C TA = 70 C PD Operating Junction and Storage Temperature Range TJ, Tstg Limit - 150 20 - 8.9 - 7.1 Unit V - 2.3a, b - 1.9a, b - 15 - 13 A - 3a, b 15 11.25 52 33 mJ 3.7a, b 2.4a, b - 50 to 150 260 W C Soldering Recommendations (Peak Temperature) Notes: a. Surface mounted