RGF1A, RGF1B, RGF1D, RGF1G, RGF1J, RGF1K, RGF1M www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier FEATURES * Superectifier structure for high reliability condition * Ideal for automated placement * Fast switching for high efficiency Superectifier(R) * Low leakage current * High forward surge capability * Meets MSL level 1, per J-STD-020, LF maximum peak of 250 C * AEC-Q101 qualified available GF1 (DO-214BA) - Automotive ordering code: base P/NHE3 * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in fast switching rectification of power supply, inverters, converters, and freewheeling diodes for consumer, automotive, and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V, 100 V, 200 V, 400 V, 600 V, 800 V, 1000 V IFSM 30 A VF 1.3 V trr 150 ns, 250 ns, 500 ns TJ max. 175 C Package GF1 (DO-214BA) Diode variations Single MECHANICAL DATA Case: GF1 (DO-214BA),
RGF1A, RGF1B, RGF1D, RGF1G, RGF1J, RGF1K, RGF1M www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier FEATURES SUPERECTIFIER(R) * Superectifier structure for high reliability condition * Ideal for automated placement * Fast switching for high efficiency * Low leakage current * High forward surge capability * Meets MSL level 1, per J-STD-020, LF maximum peak of 250 C DO-214BA (GF1) * AEC-Q101 qualified PPRIMARY CHARACTERISTICS * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 IF(AV) 1.0 A VRRM 50 V, 100 V, 200 V, 400 V, 600 V, 800 V, 1000 V IFSM 30 A VF 1.3 V trr 150 ns, 250 ns, 500 ns TJ max. 175 C Package DO-214BA (GF1) Diode variations Single MECHANICAL DATA Case: DO-214BA, molded epoxy over glass body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per
RGF1A thru RGF1M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier FEATURES * Superectifier structure for high reliability condition SUPERECTIFIER(R) * Ideal for automated placement * Fast switching for high efficiency * Low leakage current * High forward surge capability * Meets environmental standard MIL-S-19500 * Meets MSL level 1, per J-STD-020, LF maximum peak of 250 C DO-214BA (GF1) * AEC-Q101 qualified * Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC PPRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.3 V trr 150 ns, 250 ns, 500 ns TJ max. 175 C MECHANICAL DATA Case: DO-214BA, molded epoxy over glass body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified TYPICAL APPLICATIONS Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE
RGF1A, RGF1B, RGF1D, RGF1G, RGF1J, RGF1K, RGF1M www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier FEATURES * Superectifier structure for high reliability condition * Ideal for automated placement * Fast switching for high efficiency Superectifier(R) * Low leakage current * High forward surge capability * Meets MSL level 1, per J-STD-020, LF maximum peak of 250 C * AEC-Q101 qualified available GF1 (DO-214BA) - Automotive ordering code: base P/NHE3 * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in fast switching rectification of power supply, inverters, converters, and freewheeling diodes for consumer, automotive, and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V, 100 V, 200 V, 400 V, 600 V, 800 V, 1000 V IFSM 30 A VF 1.3 V trr 150 ns, 250 ns, 500 ns TJ max. 175 C Package GF1 (DO-214BA) Diode variations Single MECHANICAL DATA Case: GF1 (DO-214BA),
RGF1A - RGF1M Features * * * * * * * * Glass Passivated Junction For Surface Mounted Applications Low Forward Voltage Drop High Current Capability Easy Pick and Place High Surge Current Capability NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant www.onsemi.com SMA CASE 403AE MARKING DIAGRAM &Y&Z&3 RGF1x &Y &Z &3 RGF1x x = ON Semiconductor Logo = Assembly Plant Code = Date Code (Year & Week) = Specific Device Code = A/B/D/G/J/K/M ORDERING INFORMATION Part Number Top Mark Package Shipping RGF1A RGF1A SMA (Pb-Free) 7500 / Tape & Reel RGF1B SMA (Pb-Free) 7500 / Tape & Reel RGF1D SMA (Pb-Free) 7500 / Tape & Reel RGF1G SMA (Pb-Free) 7500 / Tape & Reel RGF1J SMA (Pb-Free) 7500 / Tape & Reel RGF1K SMA (Pb-Free) 7500 / Tape & Reel RGF1M SMA (Pb-Free) 7500 / Tape & Reel NRVRGF1A RGF1B NRVRGF1B RGF1D NRVRGF1D RGF1G NRVRGF1G RGF1J N
............................... 1223 P300A thru P300M ....................................................... 1201 Revision: 07-May-08 Alphanumeric Index Vishay General Semiconductor P600A thru P600M ....................................................... RGF1A thru RGF1M..................................................... RGL34A thru RGL34K.................................................. RGL41A thru RGL41M ................................................. RGP02-12E thru RGP02-20E ...................................... RGP10A thru RGP10M ................................................ RGP15A thru RGP15M ................................................ RGP20A thru RGP20J ................................................. RGP25A thru RGP25M ................................................ RGP30A thru RGP30M ................................................ RMB2S & RMB4S ........................................................ RMPG06A thru RMPG06K........................................... RS1A th
RGF1A thru RGF1M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier FEATURES * Superectifier structure for high reliability condition * Patented glass-plastic encapsulation technique * Ideal for automated placement * Fast switching for high efficiency * Low leakage current * High forward surge capability * Meets environmental standard MIL-S-19500 * Meets MSL level 1, per J-STD-020C, LF max peak of 250 C * Solder dip 260 C, 40 seconds * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC (R) d* e t n e Pat * Glass-plastic encapsulation technique is covered by patent No. 3,996,602, brazed-lead assembly by Patent No. 3,930,306 and lead forming by Patent No. 5,151,846 DO-214BA (GF1) TYPICAL APPLICATIONS For use in fast switching rectification of power supply, inverters, converters, and free-wheeling diodes for consumer, automotive and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.3 V trr 150 ns, 250 ns,
RGF1A thru RGF1M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier FEATURES * Superectifier structure for high reliability condition SUPERECTIFIER(R) * Ideal for automated placement * Fast switching for high efficiency * Low leakage current * High forward surge capability * Meets environmental standard MIL-S-19500 * Meets MSL level 1, per J-STD-020, LF maximum peak of 250 C DO-214BA (GF1) * AEC-Q101 qualified * Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC PPRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.3 V trr 150 ns, 250 ns, 500 ns TJ max. 175 C MECHANICAL DATA Case: DO-214BA, molded epoxy over glass body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified TYPICAL APPLICATIONS Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE
RGF1A thru RGF1M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier FEATURES * Superectifier structure for high reliability condition * Patented glass-plastic encapsulation technique * Ideal for automated placement * Fast switching for high efficiency * Low leakage current * High forward surge capability * Meets environmental standard MIL-S-19500 * Meets MSL level 1, per J-STD-020, LF maximum peak of 250 C * Solder dip 260 C, 40 s * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC (R) ed* t n e Pat * Glass-plastic encapsulation technique is covered by patent No. 3,996,602, brazed-lead assembly by Patent No. 3,930,306 and lead forming by Patent No. 5,151,846 DO-214BA (GF1) TYPICAL APPLICATIONS For use in fast switching rectification of power supply, inverters, converters, and freewheeling diodes for consumer, automotive and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.3 V trr 150 ns, 250 ns, 500
RGF1A, RGF1B, RGF1D, RGF1G, RGF1J, RGF1K, RGF1M www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier FEATURES * Superectifier structure for high reliability condition * Ideal for automated placement * Fast switching for high efficiency Superectifier(R) * Low leakage current * High forward surge capability * Meets MSL level 1, per J-STD-020, LF maximum peak of 250 C * AEC-Q101 qualified available GF1 (DO-214BA) - Automotive ordering code: base P/NHE3 * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in fast switching rectification of power supply, inverters, converters, and freewheeling diodes for consumer, automotive, and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V, 100 V, 200 V, 400 V, 600 V, 800 V, 1000 V IFSM 30 A VF 1.3 V trr 150 ns, 250 ns, 500 ns TJ max. 175 C Package GF1 (DO-214BA) Diode variations Single MECHANICAL DATA Case: GF1 (DO-214BA),
RGF1A THRU RGF1M 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features * * * * * Low Current Leakage Metallurgical Bonded Construction Glass Passivation Cavity Free Junction Capable Of Meeting MIL-S-19500 Enivronmental Standards Fast Recovery Times For High Efficiency Sintered Glass 1 Amp Fast Recovery Silicon Rectifier 50 to 1000 Volts Maximum Ratings * Operating Temperature: -65C to +175C * Storage Temperature: -65C to +150C * Maximum Thermal Resistance; 15C/W Junction To Ambient Microsemi Part Number Device Marking RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M Maximum Recurrent Peak Reverse Voltage 50V 100V 200V 400V 600V 800V 1000V Maximum RMS Voltage 35V 70V 140V 280V 420V 560V 700V Maximum DC Blocking Voltage 50V 100V 200V 400V 600V 800V 1000V Electrical Characteristics @ 25C Unless Otherwise Specified Average Forward IF(AV) 1.0A TL = 120C current Peak Forward Surge IFSM 30A 8.3ms, half si
RGF1A thru RGF1M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier FEATURES * Superectifier structure for high reliability condition * Patented glass-plastic encapsulation technique * Ideal for automated placement * Fast switching for high efficiency * Low leakage current * High forward surge capability * Meets environmental standard MIL-S-19500 * Meets MSL level 1, per J-STD-020, LF maximum peak of 250 C * Solder dip 260 C, 40 s * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC (R) ed* t n e Pat * Glass-plastic encapsulation technique is covered by patent No. 3,996,602, brazed-lead assembly by Patent No. 3,930,306 and lead forming by Patent No. 5,151,846 DO-214BA (GF1) TYPICAL APPLICATIONS For use in fast switching rectification of power supply, inverters, converters, and freewheeling diodes for consumer, automotive and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.3 V trr 150 ns, 250 ns, 500
ges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. RGF1A - RGF1M Fast Rectifiers Features * * * * * * Glass Passivated Junction For Surface Mounted Application Low Forward Voltage Drop High Current Capability Easy Pick and Place High Surge Current Capability SMA/DO-214AC COLOR BAND DENOTES CATHODE Ordering Information Part Number Top Mark Package Packing Method RGF1A RGF1A DO-214AC (SMA) Tape and Reel RGF1B RGF1B DO-214AC (SMA) Tape and Reel RGF1D RGF1D DO-214AC (SMA) Tape and Reel RGF1G RGF1G DO-214AC (SMA) Tape and Reel RGF1J RGF1J DO-214AC (SMA) Tape and Reel RGF1K RGF1K DO-214AC (SMA) Tape and Reel RGF1M RGF1M DO-214AC (SMA) Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
RGF1A thru RGF1M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier FEATURES * Superectifier structure for high reliability condition * Patented glass-plastic encapsulation technique * Ideal for automated placement * Fast switching for high efficiency * Low leakage current * High forward surge capability * Meets environmental standard MIL-S-19500 * Meets MSL level 1, per J-STD-020C, LF max peak of 250 C * Solder Dip 260 C, 40 seconds * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC (R) ed* t n e Pat * Glass-plastic encapsulation technique is covered by patent No. 3,996,602, brazed-lead assembly by Patent No. 3,930,306 and lead forming by Patent No. 5,151,846 DO-214BA (GF1) TYPICAL APPLICATIONS For use in fast switching rectification of power supply, inverters, converters, and freewheeling diodes for consumer, automotive and telecommunication. MAJOR RATINGS AND CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.3 V trr 150 ns,
RGF1A-RGF1M RGF1A - RGF1M Features * * * * * * Glass passivated junction. For surface mounted application. Low forward voltage drop. High current capability. Easy pick and place. High surge current capability. SMA/DO-214AC COLOR BAND DENOTES CATHODE Fast Rectifiers Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Parameter Value Units 1A 1B 1D 1G 1J 1K 1M 50 100 200 400 1.0 600 800 1000 VRRM Maximum Repetitive Reverse Voltage IF(AV) Average Rectified Forward Current, @ TL = 125C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range -65 to +175 C Operating Junction Temperature -65 to +175 C IFSM Tstg TJ 30 V A A *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Units 1.76 W PD Power Dissipation RJA Thermal Resistance, Junction to Ambient* 85 C/W RJL Thermal Resistance, Junction to Lead* 28 C/W *Device mounted on FR-4 PCB