rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia PHN210T Dual N-channel TrenchMOS intermediate level FET Rev. 02 -- 15 December 2010 Product data sheet 1. Product profile 1.1 General description Dual intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Suitable for high frequency applications due to fast switching characteristics Suitable for logic level gate drive sources Suitable for low gate drive sources 1.3 Applications DC-to-DC converters Motor and relay drivers Logic level translators 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Ty
PHN210T Dual N-channel TrenchMOS intermediate level FET Rev. 02 -- 15 December 2010 Product data sheet 1. Product profile 1.1 General description Dual intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Suitable for high frequency applications due to fast switching characteristics Suitable for logic level gate drive sources Suitable for low gate drive sources 1.3 Applications DC-to-DC converters Motor and relay drivers Logic level translators 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj 25 C; Tj 150 C; Repetitive peak drain-source voltage - - 30 V ID drain current Tsp = 25 C; Single device [1] - - 3.4 A Ptot total power dissipation Tsp = 25 C [2] - - 2 W VGS = 4.5 V; ID = 1 A; Tj = 25 C - 120 200 m V
PHN210T SYMBOL * Dual device * Low threshold voltage * Fast switching * Logic level compatible * Surface mount package QUICK REFERENCE DATA d1 d1 VDS = 30 V d2 d2 ID = 3.4 A RDS(ON) 100 m (VGS = 10 V) RDS(ON) 200 m (VGS = 4.5 V) s1 GENERAL DESCRIPTION Dual N-channel enhancement mode field-effect transistor in a plastic envelope using 'trench' technology. Applications:* Motor and relay drivers * d.c. to d.c. converters * Logic level translator The PHN210T is supplied in the SOT96-1 (SO8) surface mounting package. s2 g2 g1 PINNING PIN SOT96-1 DESCRIPTION 1 source 1 2 gate 1 3 source 2 4 gate 2 5,6 drain 2 7,8 drain 1 pin 1 index 8 7 6 5 1 2 3 4 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS VDS Repetitive peak drain-source voltage Continuous drain-source voltage Drain-gate voltage Gate-source voltage Drain current per MOSFET1 Tj = 25 C to 150C VDS VDGR VGS ID ID IDM Ptot Tstg, Tj Drain current per MOSFET (both MOSFET
10.4 PHKD13N03LT 30 22.0 30 30 10 30 30 6.3 30 38 45 PSMN022-30PL BSP030 PHN203 5.4 PMN40LN 30 38 46 5.4 PMN38EN 30 40 50 5.2 PMN45EN 30 42 54 5.4 30 47 60 4.6 30 55 72 4.7 30 100 200 3.2 PMV45EN PMN49EN PMV60EN BSP100 30 100 200 3.4 PHN210 30 100 200 3.4 PHN210T 30 117 190 2.5 PMV117EN 30 117 190 1.7 SI2304DS 30 120 1.9 BSH108 30 14 11.8 30 46 4.9 30 47 4.9 PMV40UN 30 400 0.85 @ 80 C BSH103 30 420 1.87 30 440 0.96 30 440 0.87 30 440 0.84 30 460 1.78 30 480 0.83 30 480 0.8 30 440 0.74 PHK12NQ03LT PMN34UN PMZ350XN PMG370XN PMF370XN PMR370XN PMZ390UN PMF400UN PMR400UN PMGD370XN 30 480 0.71 PMGD400UN 30 8000 @ 4 V 0.125 PMGD8000LN 36 4 75 PSMN004-36B Types in bold red itallic underline represent products in development 8 9 30 V - 36 V N-channel MOSFETs Small Signal Packages VDS RDSon RDSon ID [max] [max] [max] [max] [V] [m] [m] [A] @ Vgs = 10 V @ Vgs = 4.5 V @ 25 C TO-220AB (SOT78) D2PAK (SOT404) DPAK (SOT428) SO8 (SOT96-1) SC-73 (SOT223) SC-74 (SOT457) TO-236AB (SOT23) SC-70 (SOT323) SC-88 (SOT363)
4330L PHK31NQ03LT PSMN005-30K (A) @ Vgs = 10 V @ Vgs = 4.5 V @ 25 C 10 - 75 PHD71NQ03LT PHD63NQ03LT 13 - 68.9 13.5 20 10 17 - 43.4 SI4410DY PHP36N03LT PHD36N03LT 20 26 13.8 PHK13N03LT 20 26 10.4 PHKD13N03LT 22.0 - - 30 - 6.3 100 200 3.4 PHN210 100 200 3.4 PHN210T - 14 11.8 4 - 75 PSMN022-30PL PHN203 PHK12NQ03LT PSMN004-36B PHP101NQ03LT ID (max) (max) (max) (m) (m) (A) @ Vgs = 10 V @ Vgs = 4.5 V @ 25 C 2 - - D2PAK (SOT404) DPAK (SOT428) 3.95 x 4.9 x 1.1 15.6 x 10 x 4.4 11 x 10 x 4.3 6 x 6.6 x 2.3 PSMN2R0-40YS 2.1 - 100 PSMN2R2-40PS 2.8 - - PSMN2R8-40PS 75 2.8 - 100 PSMN2R6-40YS 80 PH5330E 3.3 - - PSMN3R3-40YS 5.9 - 76.7 PH8030L 4.1 - 94.5 PH4840S 6 9.7 76.7 PH6030L 4.2 - 100 PSMN4R0-40YS PSMN6R0-30YL 4.3 - 75 PHP176NQ04T 4.6 - 100 PSMN4R5-40PS 5.2 - 75 5.7 - - 7.6 - 77 8 - 75 8.6 - 70 PSMN8R3-40YS PSMN014-40YS 73 23.7 7 11.3 65 7.9 11 68 PH7030L 8 13.8 55 PSMN9R0-30YL 8.2 - 67 PH8230E 8.9 - 20.3 9 12.5 63 - 63 PHU101NQ03LT RDSon TO-220AB (SOT78) - - PHD101NQ03LT RDSon Power-SO8 (LFPAK) - 9.7 4.9 x
T 30 1400 0.35 0.52 PHK31NQ03LT 30 4.4 5.6 30.4 33 PSMN005-30K 30 5.5 8 PHK28NQ03LT 30 6.5 7.7 23.7 30.3 34 PHK18NQ03LT 30 8.9 12.5 20.3 10.6 SI4410DY 30 13.5 20 10 21.5 PHK13N03LT 30 20 26 13.8 10.7 PHKD13N03LT 30 20 26 10.4 10.7 14.6 PHN203 30 30 55 6.3 PHN210T 30 100 200 3.4 PHC21025 30 250 400 PHK12NQ03LT 30 14 6 10 11.8 Types in bold red represent new products For the most up to date product information, please visit www.nxp.com/mosfets 25 30 V N-channel MOSFETs Package name VDS [max] [V] RDSon [max] @ 10 V [m] RDSon [max] @ 4.5 V [m] ID [max] [A] QG(tot) [typ] (nC) NX3020NAKV 30 4500 5200 0.2 0.34 NX3008NBKV 30 1400 0.4 0.52 Type number SOT666 TO-220AB (SOT78) TO-236AB (SOT23) TSOP6 (SOT457) TSSOP6 (SOT363) 26 PSMN1R1-30PL 30 1.3 1.4 120 118 PSMN1R6-30PL 30 1.7 2.1 100 101 PSMN1R8-30PL 30 1.8 2.3 100 83 PSMN2R0-30PL 30 2.1 2.8 100 55 PSMN2R7-30PL 30 2.7 3.6 100 32 PSMN3R4-30PL 30 3.4 4.1 100 31 PSMN4R3-30PL 30 4.3 6.2 100 19 PHP36N03LT 30 17 22 43.4 18.5 5.1 PSMN017-30PL 30 17 23.4 32 PSMN0
10.4 PHKD13N03LT 30 22.0 30 30 10 30 30 6.3 30 38 45 PSMN022-30PL BSP030 PHN203 5.4 PMN40LN 30 38 46 5.4 PMN38EN 30 40 50 5.2 PMN45EN 30 42 54 5.4 30 47 60 4.6 30 55 72 4.7 30 100 200 3.2 PMV45EN PMN49EN PMV60EN BSP100 30 100 200 3.4 PHN210 30 100 200 3.4 PHN210T 30 117 190 2.5 PMV117EN 30 117 190 1.7 SI2304DS 30 120 1.9 BSH108 30 14 11.8 30 46 4.9 30 47 4.9 PMV40UN 30 400 0.85 @ 80 C BSH103 30 420 1.87 30 440 0.96 30 440 0.87 30 440 0.84 30 460 1.78 30 480 0.83 30 480 0.8 30 440 0.74 PHK12NQ03LT PMN34UN PMZ350XN PMG370XN PMF370XN PMR370XN PMZ390UN PMF400UN PMR400UN PMGD370XN 30 480 0.71 PMGD400UN 30 8000 @ 4 V 0.125 PMGD8000LN 36 4 75 PSMN004-36B Types in bold red itallic underline represent products in development 8 9 40 V - 55 V N-channel MOSFETs NXP Power solutions make your PC Energy Efficient Small Signal Packages VDS RDSon RDSon ID [max] [max] [max] [max] [V] [m] [m] [A] @ Vgs = 10 V @ Vgs = 4.5 V @ 25 C Power-SO8 (LFPAK) TO-220AB (SOT78) D2PAK (SOT404) 15.6 x 10 x 4.4 2 2.1 40 2.8 40 2.8
3.5 3.8 30 70.3 PHK31NQ03LT 30 4.4 - 30.4 - Typenumber PSMN005-30K 30 5.5 8 - 34 PHK28NQ03LT 30 6.5 7.7 23.7 30.3 PHK18NQ03LT 30 8.9 - 20.3 - SI4410DY 30 13.5 20 10 21.5 PHK13N03LT 30 20 26 13.8 10.7 PHKD13N03LT 30 20 26 10.4 10.7 PHN203 30 30 55 6.3 14.6 PHN210T 30 100 200 3.4 - PSMN1R6-30PL 30 1.7 2.1 100 101 PSMN1R8-30PL 30 1.8 2.3 100 83 PSMN2R0-30PL 30 2.1 2.8 100 55 PSMN2R7-30PL 30 2.7 3.6 100 32 PSMN3R4-30PL 30 3.4 4.1 100 31 PSMN4R3-30PL 30 4.3 6.2 100 19 PHP36N03LT 30 17 22 43.4 18.5 PSMN022-30PL 30 22 34 30 4.4 For the most up to date product information, please visit http://standardproducts.nxp.com/mosfets 78 40 V - 55 V N-channel MOSFETs Package types in bold represent new products VDS [max] (V) RDSon [max] @ VGS = 10 V (m) RDSon [max] @ VGS = 4.5 V (m) ID [max] (A) Qg(tot) [typ] (nC) PHB191NQ06LT 55 3.7 4.4 75 95.6 PHB21N06LT 55 70 - 19 - PHB20N06T 55 75 - 20.3 11 PHD20N06T 55 77 - 18 11 PSMN2R6-40YS 40 2.8 - 100 63 PSMN3R3-40YS 40 3.3 - 100 49 PSMN4R0-40YS 40 4.2 - 100 38 PSMN5R8-40
13 9397 750 11188 D2PAK (SOT404) SOT363 SOT323 SOT416 TSOP6 (SOT457) LFPAK (SOT669) D-PAK (SOT428) TO220AB (SOT78) I-pak (SOT533) TO247 (SOT429) PH16030L BSP030 PHD36N03LT PHN103T PMV45EN PMN40LN PMN34UN PMV40UN PMN45EN PMV60EN PHD16N03T PHD16N03LT BSP100 PHN210T PMV117EN SI2304DS BSH108 PMG370XN PMF370XN PMF400UN PSMN004-36B PH4840S PHK24NQ04LT PHB222NQ04LT PHB225NQ04T PHB174NQ04LT PHB176NQ04T PHB129NQ04LT PHB143NQ04T PHB95NQ04LT PHB101NQ04T PHP222NQ04LT PHP225NQ04T PHP174NQ04LT PHP176NQ04T PHP129NQ04LT PHP143NQ04T PHP101NQ04T BSN20 SiliconMAX part numbering Philips - Micro ()TrenchMOSTM Philips SiliconMAX RDS(ON) in m1/2 PMR370XN PMR400UN BSH103 TrenchMOS part numbering TrenchMOS - 20, 30 and 60V N Channel MOSFETs in 9397 750 13081 SOT416 (SC-75) w w w. s e m i c o n d u c t o r s . p h i l i p s . c o m SOT23 PI4884 SI4800 PHK13N03LT TrenchMOS - 20, 30 and 60V -N Channel MOSFETs in 9397 750 11208 SOT323 & SOT363 Powerful solutions for DC/DC Conversion Cool Solutions for DC/DC Conversion Extend
6NQ03LT PHB55N03LTA PHB45N03LTA PHN103S PH3230 PH5330 PMN34UN PMN40LN PMN45EN PSMN003-30B PSMN005-30K PMV117EN PMWD18UN PMWD19UN PMWD30UN SI4420DY SI4410DY PHK12NQ03LT SI4884 SI4416DY SI4800 SI9410DY SI9936DY PHB160N03T BSP030 PHN103T BSH108 BSH103 BSP100 PHN210T PHB101NQ03LT PHB82NQ03LT PHB71NQ03LT PHB63NQ03LT PHB55N04LT PSMN004-36B PHK24NQ04LT BSN20 PHD101NQ03LT PHD82NQ03LT PHD71NQ03LT PHD63NQ03LT PHD55N04LT TrenchMOSTM part numbering LEADED PACKAGES TO220AB (SOT78) IPAK (SOT226) TO247 (SOT429) Philips - Micro ()TrenchMOSTM PMN32UN Package identifier N = TSOP6 (SOT457) W = TSSOP8 V = SOT23 G = SC88 (SOT363) F = SC70 ((SOT323) R = SC75 (SOT416) S = SC89 (SOT490) T = SOT666 Z = MCD N = N-channel P = P-channel Gate level U = Ultra Low - 8 VGS X = Extremely Low - 12 VGS L = Logic level - 15 VGS E = Enhanced Logic - 20 VGS S = Standard - 30 VGS MSD991 RDS(ON) in m PSMN002-25P PSMN003-25W PHP152NQ03LT PHP98N03LT TrenchMOS - PH types part numbering Philips LT = logic level Trench PHP96NQ03LT PHP108NQ0
300 2 x 0.1 (N) 2 x 0.25 (P) 0.09 8 (N) / 17 (P) 10 10 10 10 2 x 3.4 2 x 2.3 2x3 0.3 (N) / 0.2 (P) TrenchMOS TrenchMOS (N) VDMOS (P) TrenchMOS VDMOS TrenchMOS (N) VDMOS 25 25 TYPICAL Motherboard General PHN70308 PC Peripherals Telecom 1 1/2/3 2/3 PHN603S PHN210T* PHP225* PHKD3NQ10T* PHC2300 APPLICATIONS 3/4 1/4 1 1 6 3/6 1 1 3/6 3/6 3/4 2 Low-ohmic power-switching MOSFETs - extending battery life in mobile equipment Spice data can be found on our web-site: http://www.semiconductors.philips.com/models/ 32 www.semiconductors.philips.com 33 Benefits of Philips Semiconductors' MOSFETs 1) 2) 3) 4) 5) 6) 7) 8) Outstanding performance from leading edge TrenchMOS technology. Wide variety of operating voltages, RDS(on) values, drain current ratings, power handling and package types - allows you more flexibility. Extended TrenchMOS range suitable for a wider variety of applications. Continued package and process developments mean smaller and smaller packages. Excellent thermal performance eases route to S
enchMOS Schottky TrenchMOS 10 10 2 x 6.3 3.5 (N) / 2.3 (P) PHN203* PHC21025 10 10 10 10 2 x 3.4 2 x 2.3 2x3 0.3 (N) / 0.2 (P) TrenchMOS TrenchMOS (N) VDMOS (P) TrenchMOS VDMOS TrenchMOS (N) VDMOS General PHN70308 PC Peripherals Telecom 1 1/2/3 2/3 PHN603S PHN210T* PHP225* PHKD3NQ10T* PHC2300 APPLICATIONS 3/4 1/4 1 1 6 3/6 1 1 3/6 3/6 3/4 2 Low-ohmic power-switching MOSFETs - extending battery life in mobile equipment Spice data can be found on our web-site: http://www.semiconductors.philips.com/models/ 32 www.semiconductors.philips.com 33 6535 07-03-2001 06:33 Pagina 36 Benefits of Philips Semiconductors' MOSFETs 1) 2) 3) 4) 5) 6) 7) 8) Outstanding performance from leading edge TrenchMOS technology. Wide variety of operating voltages, RDS(on) values, drain current ratings, power handling and package types - allows you more flexibility. Extended TrenchMOS range suitable for a wider variety of applications. Continued package and process developments mean smaller and smaller packages. Excellent ther
5 1.7 1.9 118 101 83 55 32 31 19 4.4 8.6 6.5 9.4 9.4 4.6 4.6 6.4 2.1 0.52 6.4 9.3 12.4 9.6 6.2 6.1 13.8 6.1 8.8 9.9 0.52 0.65 0.65 0.89 0.35 SO8 (SOT96) 5.0 x 6.0 x 1.3 PHK31NQ03LT PSMN005-30K PHK28NQ03LT PHK18NQ03LT SI4410DY PHK13N03LT PHKD13N03LT PHN203 PHN210T PHC21025 PHK12NQ03LT 30 30 30 30 30 30 30 30 30 30 30 NX3008NBKV TO-220AB (SOT78) 15.5 x 10.0 x 4.3 TO-236AB (SOT23) 2.9 x 1.3 x 1.0 TSOP6 (SOT457) 2.9 x 1.5 x 1.0 TSSOP6 (SOT363) 2.0 x 1.25 x 0.95 4.4 5.5 6.5 8.9 13.5 20 20 30 100 250 5.6 8 7.7 12.5 20 26 26 55 200 400 14 VDS [max] (V) DFN1006-3 (SOT883) 1.0 x 0.6 x 0.5 RDSon [max] @ VGS = 4.5 V (m) QG(tot) [typ] (nC) Typenumber SOT666 1.6 x 1.2 x 0.55 RDSon [max] @ VGS = 10 V (m) ID [max] (A) Package 1.3 1.7 1.8 2.1 2.7 3.4 4.3 22 22 36 42 55 117 117 120 23.7 20.3 10 13.8 10.4 6.3 3.4 11.8 400 1400 25 47 25 31 43 46 45 50 60 46 1400 440 440 480 20 23 31 38 38 40 47 0.4 4.8 4.9 6.7 6.2 5.1 5.4 5.4 5.2 4.6 4.9 0.35 0.96 0.74 0.71 0.125 Part numbering for NXP MOSFETs MOSFET BRAND NAME P S
common drain Dual N-channel 20 14 IDS (A) Dual N-channel VDS -(V) 30 19 30 15.4 30 19 35 14.9 30 250 400 3 30 900 1350 50 10000 60 2500 30 PMWD19UN IDS -(A) MAX 900 3750 1100 1200 SOT223 PMV65XP PMK35EP BSP250 0.47 BSH203 0.52 BSH202 0.13 BSS84 0.3 BSH201 PHN210T 200 12000 0.225 PHC21025 240 12000 0.2 0.87 250 15000 0.225 BSP225 0.83 Dual N-channel PMGD400UN 300 17000 0.21 BSP230 0.125 Dual N-channel PMGD8000LN 300 17000 0.17 Dual P-channel 0.3 (N) / 0.2 (P) Complementary Pair TO92 (SOT54) PMN50XP Dual N-channel Dual N-channel SOT89 BSH205 Complementary Pair Dual N-channel 0.49 SOT23 PHK04P02T 2 x 3.4 2 x 2.3 TSOP6 (SOT457) BSH207 3.5 (N) / 2.3 (P) PMGD370XN SOT96 (SO8) BSP220 BSS192 BSP254A BSP304A PHP225 PMGD780SN PHC2300 Power Management selection guide 2008 15 Automotive MOSFETs General Purpose Automotive (GPA) TrenchMOS 16 VDS (V) RDS(ON) (m) @VGS (V) ID (max) @ 25C (A) VDS (V) RDS(ON) (m) @VGS (V) ID (max) @ 25C (A) 30 5 10 75 BUK7605-30A 30 5 5 75 BUK9605-30A BUK7505-30A 75 9 10 75 BUK7609
13 9397 750 11188 D2PAK (SOT404) SOT363 SOT323 SOT416 TSOP6 (SOT457) LFPAK (SOT669) D-PAK (SOT428) TO220AB (SOT78) I-pak (SOT533) TO247 (SOT429) PH16030L BSP030 PHD36N03LT PHN103T PMV45EN PMN40LN PMN34UN PMV40UN PMN45EN PMV60EN PHD16N03T PHD16N03LT BSP100 PHN210T PMV117EN SI2304DS BSH108 PMG370XN PMF370XN PMF400UN PSMN004-36B PH4840S PHK24NQ04LT PHB222NQ04LT PHB225NQ04T PHB174NQ04LT PHB176NQ04T PHB129NQ04LT PHB143NQ04T PHB95NQ04LT PHB101NQ04T PHP222NQ04LT PHP225NQ04T PHP174NQ04LT PHP176NQ04T PHP129NQ04LT PHP143NQ04T PHP101NQ04T BSN20 SiliconMAX part numbering Philips - Micro ()TrenchMOSTM Philips SiliconMAX RDS(ON) in m1/2 PMR370XN PMR400UN BSH103 TrenchMOS part numbering TrenchMOS - 20, 30 and 60V N Channel MOSFETs in 9397 750 13081 SOT416 (SC-75) w w w. s e m i c o n d u c t o r s . p h i l i p s . c o m SOT23 PI4884 SI4800 PHK13N03LT TrenchMOS - 20, 30 and 60V -N Channel MOSFETs in 9397 750 11208 SOT323 & SOT363 Powerful solutions for DC/DC Conversion Cool Solutions for DC/DC Conversion Extend