NSVBAT54LT1G Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Extremely Fast Switching Speed Low Forward Voltage - 0.35 Volts (Typ) @ IF = 10 mAdc AEC Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* http://onsemi.com 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25C Derate above 25C PF 200 2.0 mW mW/C Forward Current (DC) IF 200 Max mA Rating Non-Repetitive Peak Forward Current tp < 10 msec IFSM Repetitive Peak Forward Current Pulse Wave = 1 sec,
NSVBAT54LT1G Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. * * * * * Extremely Fast Switching Speed Low Forward Voltage - 0.35 Volts (Typ) @ IF = 10 mAdc AEC Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* http://onsemi.com 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25C Derate above 25C PF 200 2.0 mW mW/C Forward Current (DC) IF 200 Max mA Rating Non-Repetitive Peak Forward Current tp < 10 msec IFSM Repetitive Peak Forward Current Pulse Wav
etails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2014 December, 2014 - Rev. 13 Device Package Shipping BAT54LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel NSVBAT54LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BAT54LT1/D BAT54L ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Reverse Breakdown Voltage (IR = 10 A) Min Typ Max 30 - - - 7.6 10 - 0.5 2.0 - - - - - 0.22 0.29 0.35 0.41 0.52 0.24 0.32 0.40 0.50 0.80 - - 5.0 V(BR)R Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT Reverse Leakage (VR = 25 V) IR Forward Voltage (IF = 0.1 mA) (IF = 1.0 mA) (IF = 10 mA) (IF = 30 mA) (IF = 100 mA) VF Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1) trr Unit Volts pF
Code = Date Code = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping BAT54LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel NSVBAT54LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel BAT54LT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2017 August, 2018 - Rev. 16 Publication Order Number: BAT54LT1/D BAT54L ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Reverse Breakdown Voltage (IR = 10 A) Min Typ Max 30 - - - 7.6 10 - 0.5 2.0 - - - - - 0.22 0.29 0.35 0.41 0.52 0.24 0.32 0.40 0.50 0.80 - - 5.0 V(BR)R Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT Reverse Leakage (VR = 25 V) IR Forward Voltage (IF = 0.1 mA) (IF = 1.0 mA) (IF = 10 mA
Code = Date Code = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping BAT54LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel NSVBAT54LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel BAT54LT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2017 August, 2018 - Rev. 16 Publication Order Number: BAT54LT1/D BAT54L ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Reverse Breakdown Voltage (IR = 10 A) Min Typ Max 30 - - - 7.6 10 - 0.5 2.0 - - - - - 0.22 0.29 0.35 0.41 0.52 0.24 0.32 0.40 0.50 0.80 - - 5.0 V(BR)R Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT Reverse Leakage (VR = 25 V) IR Forward Voltage (IF = 0.1 mA) (IF = 1.0 mA) (IF = 10 mA
Code = Date Code = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping BAT54LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel NSVBAT54LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel BAT54LT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2017 August, 2018 - Rev. 16 Publication Order Number: BAT54LT1/D BAT54L ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Reverse Breakdown Voltage (IR = 10 A) Min Typ Max 30 - - - 7.6 10 - 0.5 2.0 - - - - - 0.22 0.29 0.35 0.41 0.52 0.24 0.32 0.40 0.50 0.80 - - 5.0 V(BR)R Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT Reverse Leakage (VR = 25 V) IR Forward Voltage (IF = 0.1 mA) (IF = 1.0 mA) (IF = 10 mA