2010 China RoHS Product Name NP80N04CHE-S12-AZ NP80N04DHE NP80N04DHE-S12 NP80N04DHE-S12-AY NP80N04DHE-S12-AZ NP80N04EHE(1)-E1 NP80N04EHE-E1 NP80N04EHE-E2 NP80N04KHE-E1 NP80N04KHE-E1-AY NP80N04KHE-E1-AZ NP80N04KHE-E2-AY NP80N04MDG-S18-AY NP80N04MHE-S18-AY NP80N04MLG-S18-AY NP80N04NDG-S18-AY NP80N04NHE-S18-AY NP80N04NLG-S18-AY NP80N04NUG-S18-AY NP80N04PDG-E1B-AY NP80N04PDG-E2B-AY NP80N04PLG-E1B-AY NP80N04PLG-E2B-AY NP80N04PUG-E1B-AY NP80N04PUG-E2B-AY NP80N055CHE NP80N055CHE-AZ NP80N055CHE-S12 NP80N055CHE-S12-AZ NP80N055CLE NP80N055CLE-AZ NP80N055DHE NP80N055DHE-AY NP80N055DLE NP80N055DLE-AY NP80N055DLE-AZ NP80N055DLE-S12 NP80N055DLE-S12-AY NP80N055DLE-S12-AZ NP80N055EHE-E1 NP80N055EHE-E2 NP80N055ELE-E1 NP80N055ELE-E2 NP80N055KHE-E1-AY NP80N055KHE-E2-AY NP80N055KLE-E1 NP80N055KLE-E1-AY NP80N055KLE-E1-AZ NP80N055KLE-E2-AY NP80N055MDG-S18-AY NP80N055MHE-S18-AY NP80N055MLE-S18-AY NP80N055NDG-S18-AY NP80N055NHE-S18-AY NP80N055NLE-S18-AY NP80N055PDG-E1B-AY Environment -Friendly Use Period 10 10 10 10 10
ISTOR NP80N04MLG, NP80N04NLG, NP80N04PLG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP80N04MLG, NP80N04NLG, and NP80N04PLG are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP80N04MLG-S18-AY NP80N04NLG-S18-AY NP80N04PLG-E1B-AY NP80N04PLG-E2B-AY LEAD PLATING PACKING PACKAGE Tube TO-220 (MP-25K) typ. 1.9 g Note Note Note 50 p/tube Pure Sn (Tin) Note Tape 1000 p/reel TO-262 (MP-25SK) typ. 1.8 g TO-263 (MP-25ZP) typ. 1.5 g Note Pb-free (This product does not contain Pb in the external electrode.) FEATURES (TO-220) * Logic level * Built-in gate protection diode * Super low on-state resistance - NP80N04MLG, NP80N04NLG RDS(on)1 = 4.8 m MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 m MAX. (VGS = 4.5 V, ID = 35 A) (TO-262) - NP80N04PLG RDS(on)1 = 4.5 m MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 8.7 m MAX. (VGS = 4.5 V, ID = 35 A) * High current rating ID(DC) = 80 A * Low input capacitance (TO-263) Ciss = 4600 pF TYP. * Designed
ISTOR NP80N04MLG, NP80N04NLG, NP80N04PLG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP80N04MLG, NP80N04NLG, and NP80N04PLG are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP80N04MLG-S18-AY NP80N04NLG-S18-AY NP80N04PLG-E1B-AY NP80N04PLG-E2B-AY LEAD PLATING PACKING PACKAGE Tube TO-220 (MP-25K) typ. 1.9 g Note Note Note 50 p/tube Pure Sn (Tin) Note Tape 1000 p/reel TO-262 (MP-25SK) typ. 1.8 g TO-263 (MP-25ZP) typ. 1.5 g Note Pb-free (This product does not contain Pb in the external electrode.) FEATURES (TO-220) * Logic level * Built-in gate protection diode * Super low on-state resistance - NP80N04MLG, NP80N04NLG RDS(on)1 = 4.8 m MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 m MAX. (VGS = 4.5 V, ID = 35 A) (TO-262) - NP80N04PLG RDS(on)1 = 4.5 m MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 8.7 m MAX. (VGS = 4.5 V, ID = 35 A) * High current rating ID(DC) = 80 A * Low input capacitance (TO-263) Ciss = 4600 pF TYP. * Designed