MRF1570N Rev. 9, 6/2008 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 12.5 volt mobile FM equipment. * Specified Performance @ 470 MHz, 12.5 Volts Output Power -- 70 Watts Power Gain -- 11.5 dB Efficiency -- 60% * Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 470 MHz, 2 dB Overdrive Features * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Broadband - Full Power Across the Band: 135 - 175 MHz 400 - 470 MHz * Broadband Demonstration Amplifier Information Available Upon Request * 200_C Capable Plastic Package * N Suffix Indicates Lead - Free Terminations. RoHS Compliant. * In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel. 47
MRF1570T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF1570T1 MRF1570FT1 MRF1570NT1 MRF1570FNT1 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 12.5 volt mobile FM equipment. * Specified Performance @ 470 MHz, 12.5 Volts Output Power -- 70 Watts Power Gain -- 10 dB Efficiency -- 50% * Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 470 MHz, 2 dB Overdrive * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Broadband - Full Power Across the Band: 135 - 175 MHz 400 - 470 MHz * Broadband Demonstration Amplifier Information Available Upon Request * N Suffix Indicates Lead - Free Terminations * Available in Tape and Reel. T1 Suffix = 500
MRF1570N Rev. 7, 5/2006 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 12.5 volt mobile FM equipment. * Specified Performance @ 470 MHz, 12.5 Volts Output Power -- 70 Watts Power Gain -- 10 dB Efficiency -- 50% * Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 470 MHz, 2 dB Overdrive Features * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Broadband - Full Power Across the Band: 135 - 175 MHz 400 - 470 MHz * Broadband Demonstration Amplifier Information Available Upon Request * 200_C Capable Plastic Package * N Suffix Indicates Lead - Free Terminations. RoHS Compliant. * Available in Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch
MRF1570T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 12.5 volt mobile FM equipment. * Specified Performance @ 470 MHz, 12.5 Volts Output Power -- 70 Watts Power Gain -- 10 dB Efficiency -- 50% * Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 470 MHz, 2 dB Overdrive * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Broadband-Full Power Across the Band: 135-175 MHz 400-470 MHz * Broadband Demonstration Amplifier Information Available Upon Request * Available in Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel. 470 MHz, 70 W, 12.5 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 1366-03, STYLE 1 TO-272 SPLIT LEAD PLASTIC MRF1570T1 CASE 1366A-02, STYLE
. . . . . 5-128 MRF18060A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-273 MRF1550FT1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-128 MRF18060AR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-273 MRF1570T1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-137 MRF18060ALSR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-273 MRF1570FT1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-137 MRF18060ASR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-273 MRF6522-70 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-151 MRF18060B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-279 MRF6522-70R3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-151 MRF18060BR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-279 MRF9002R2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-158 MRF18060BLSR3 . . . . . . . . . .
MRF1570T1 Rev. 5, 3/2005 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 MRF1570T1 MRF1570FT1 N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 12.5 volt mobile FM equipment. * Specified Performance @ 470 MHz, 12.5 Volts Output Power -- 70 Watts Power Gain -- 10 dB Efficiency -- 50% * Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 470 MHz, 2 dB Overdrive * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Broadband-Full Power Across the Band: 135-175 MHz 400-470 MHz * Broadband Demonstration Amplifier Information Available Upon Request * N Suffix Indicates Lead-Free Terminations * 200_C Capable Plastic Package * Available in Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13
MRF157/D SEMICONDUCTOR TECHNICAL DATA N-Channel Enhancement Mode Designed primarily for linear large-signal output stages to 80 MHz. ARCHIVE INFORMATION * Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 21 dB (Typ) Efficiency = 45% (Typ) 600 W, to 80 MHz MOS LINEAR RF POWER FET & CASE 368-03, STYLE 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 125 Vdc Drain-Gate Voltage VDGO 125 Vdc VGS 40 Vdc Gate-Source Voltage Drain Current -- Continuous ID 60 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 1350 7.7 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C Symbol Max Unit RJC 0.13 C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MOTOROLA RF DEVICE DATA Motorola, Inc. 1995 MRF157
MRF1570N Rev. 10, 6/2009 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 12.5 volt mobile FM equipment. * Specified Performance @ 470 MHz, 12.5 Volts Output Power -- 70 Watts Power Gain -- 11.5 dB Efficiency -- 60% * Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 470 MHz, 2 dB Overdrive Features * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Broadband - Full Power Across the Band: 135 - 175 MHz 400 - 470 MHz * Broadband Demonstration Amplifier Information Available Upon Request * 200_C Capable Plastic Package * N Suffix Indicates Lead - Free Terminations. RoHS Compliant. * In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel. 4
MRF1570N Rev. 10, 6/2009 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 12.5 volt mobile FM equipment. * Specified Performance @ 470 MHz, 12.5 Volts Output Power -- 70 Watts Power Gain -- 11.5 dB Efficiency -- 60% * Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 470 MHz, 2 dB Overdrive Features * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Broadband - Full Power Across the Band: 135 - 175 MHz 400 - 470 MHz * Broadband Demonstration Amplifier Information Available Upon Request * 200_C Capable Plastic Package * N Suffix Indicates Lead - Free Terminations. RoHS Compliant. * In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel. 4
MRF1570T1 Rev. 6, 5/2006 Replaced by MRF1570NT1/FNT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MRF1570T1 MRF1570FT1 RF Power Field Effect Transistors Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 12.5 volt mobile FM equipment. * Specified Performance @ 470 MHz, 12.5 Volts Output Power -- 70 Watts Power Gain -- 10 dB Efficiency -- 50% * Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 470 MHz, 2 dB Overdrive * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Broadband - Full Power Across the Band: 135 - 175 MHz 400 - 470 MHz * Broadband Demonstration Amplifier Information Available Upon Request * 200_C Capable Plastic Pack
MRF157 Linear RF Power MOSFET 600W, to 80MHz Designed primarily for linear large signal output stages to 80 MHz. Specified 50 volts, 30 MHz characteristics Output power = 600 watts Power gain = 21 dB (typ.) Efficiency = 45% (typ.) Rev. V1 Product Image 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MRF157 Linear RF Power MOSFET 600W, to 80MHz Rev. V1 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MRF157 Linear RF Power MOSFET 600W, to 80MHz Rev.
MRF1570N Rev. 8, 9/2006 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 12.5 volt mobile FM equipment. * Specified Performance @ 470 MHz, 12.5 Volts Output Power -- 70 Watts Power Gain -- 10 dB Efficiency -- 50% * Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 470 MHz, 2 dB Overdrive Features * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Broadband - Full Power Across the Band: 135 - 175 MHz 400 - 470 MHz * Broadband Demonstration Amplifier Information Available Upon Request * 200_C Capable Plastic Package * N Suffix Indicates Lead - Free Terminations. RoHS Compliant. * Available in Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch
MRF1570T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 12.5 volt mobile FM equipment. * Specified Performance @ 470 MHz, 12.5 Volts Output Power -- 70 Watts Power Gain -- 10 dB Efficiency -- 50% * Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 470 MHz, 2 dB Overdrive * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Broadband-Full Power Across the Band: 135-175 MHz 400-470 MHz * Broadband Demonstration Amplifier Information Available Upon Request * Available in Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel. 470 MHz, 70 W, 12.5 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 1366-03, STYLE 1 TO-272 SPLIT LEAD PLASTIC MRF1570T1 CASE 1366A-02, STYLE
MRF157 Designed primarily for linear large-signal output stages to 80 MHz. Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 21 dB (Typ) Efficiency = 45% (Typ) 600 W, to 80 MHz MOS LINEAR RF POWER FET oJ oot tt Lto. CASE 368-03, STYLE 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage Voss 125 Vde DrainGate Voltage VoGco 125 Vde GateSource Voltage Vas +40 Vde Drain Current Continuous Ip 60 Adc Total Device Dissipation @ To = 25C Po 1350 Watts Derate above 25C 77 wc Storage Temperature Range Tstg -65 to +150 Cc Operating Junction Temperature Ty 200 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case ReJc 0.13 CW NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MOTOROLA RF DEVICE DATA MRF157 2-345ELECTRICAL CHARACTERISTICS (Tc = 25 C unless otherwise noted) Characteristic Symbol Min Typ Ma
MRF1570T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N-Channel Enhancement-Mode Lateral MOSFET The MRF1570T1 is designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 12.5 volt mobile FM equipment. * Specified Performance @ 470 MHz, 12.5 Volts Output Power -- 70 Watts Power Gain -- 10 dB Efficiency -- 50% * Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 470 MHz, 2 dB Overdrive * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * RF Power Plastic Surface Mount Package * Broadband-Full Power Across the Band: 135-175 MHz 400-470 MHz * Broadband Demonstration Amplifier Information Available Upon Request * Available in Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel. 470 MHz, 70 W, 12.5 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET CASE 1366-01 (TO-272 SPLIT-