MMBD301LT3G, SMMBD301LT3G Silicon Hot-Carrier Diodes http://onsemi.com Schottky Barrier Diodes These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES Features Extremely Low Minority Carrier Lifetime - 15 ps (Typ) Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 AEC Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* TO-92 2-Lead CASE 182 STYLE 1 SOT-23 (TO-236) CASE 318 STYLE 8 TO-92 SOT-23 2 CATHODE 1 ANODE 3 CATHODE 1 ANODE MAR
MMBD301LT3G, SMMBD301LT3G Silicon Hot-Carrier Diodes www.onsemi.com Schottky Barrier Diodes These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES Features * * * * * Extremely Low Minority Carrier Lifetime - 15 ps (Typ) Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Reverse Voltage Forward Current (DC) Total Device Dissipation @ TA = 25C MBD301G MMBD301LT1G, MMB
MMBD301LT3G, SMMBD301LT3G Silicon Hot-Carrier Diodes www.onsemi.com Schottky Barrier Diodes These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES Features * * * * * Extremely Low Minority Carrier Lifetime - 15 ps (Typ) Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Reverse Voltage Forward Current (DC) Total Device Dissipation @ TA = 25C MBD301G MMBD301LT1G, MMB
MMBD301LT3G, SMMBD301LT3G Silicon Hot-Carrier Diodes www.onsemi.com Schottky Barrier Diodes These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES Features * * * * * Extremely Low Minority Carrier Lifetime - 15 ps (Typ) Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Reverse Voltage Forward Current (DC) Total Device Dissipation @ TA = 25C MBD301G MMBD301LT1G, MMB
MMBD301LT3G, SMMBD301LT3G Silicon Hot-Carrier Diodes http://onsemi.com Schottky Barrier Diodes These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES Features * * * * * Extremely Low Minority Carrier Lifetime - 15 ps (Typ) Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Reverse Voltage Forward Current (DC) Total Device Dissipation @ TA = 25C MBD301G MMBD301LT1G,
MMBD301LT3G, SMMBD301LT3G Silicon Hot-Carrier Diodes www.onsemi.com Schottky Barrier Diodes These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES Features * * * * * Extremely Low Minority Carrier Lifetime - 15 ps (Typ) Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Reverse Voltage Forward Current (DC) Total Device Dissipation @ TA = 25C MBD301G MMBD301LT1G, MMB
231 .248 .231 VRRM Package Min. (V) 863-MBRD330G 863-MBRD330RLG 863-MBRD340G 863-MBRD350G 863-MBRD350T4G 863-MBRD650CTG 863-MBRD660CTRLG 863-MBRF20H100CTG 863-MBRF30L45CTG 863-MBRM110ET1G 863-MBRM130LT1G 863-MBRS1540T3G 863-MBRS2040LT3G 863-MBRS320T3G 863-MMBD301LT3G 863-MMBD330T1G 863-MMBD352WT1G 863-MMBD353LT1G VF Max. (V) IRM Max. (ns) IFSM Max. (A) Price Each DPAK 30 0.620075 DPAK 30 0.620075 DPAK 40 0.620075 DPAK 50 0.620075 DPAK 50 0.620075 DPAK 50 0.910075 DPAK 60 0.910075 TO-220 3 100 0.88 4.5 250 TO-220 45 0.61650190 Powermite10 0.53 1 50 Powermite30 0.38 410 50 SMB 400.4680 40 SMB 400.4380 70 SMC 20 0.5200080 SOT-23 30 0.450.2 - SC-70 30 0.450.2 - SC-70 7 0.60.25 - SOT-23 7 0.60.25 - 1 25 100 .29 .29 .50 .50 .50 .91 .45 .77 .92 .12 .12 .14 .15 .19 .12 .07 .07 .16 .248 .248 .359 .359 .359 .769 .381 .696 .74 .111 .111 .128 .137 .162 .108 .067 .067 .134 .231 .231 .231 .231 .231 .656 .317 .51 .646 .103 .103 .12 .129 .141 .074 .054 .054 .099 SMALL SIGNAL SWITCHING DIODES For quantities of 10
- 0.38 0.45 Vdc Forward Voltage (IF = 10 mAdc) Figure 4 VF - 0.52 0.6 Vdc Characteristic Reverse Breakdown Voltage (IR = 10 mA) ORDERING INFORMATION Package Shipping MBD301G TO-92 (Pb-Free) 5000 Units / Bulk MMBD301LT1G SOT-23 (Pb-Free) 3000 / Tape & Reel MMBD301LT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MBD301G, MMBD301LT1G TYPICAL ELECTRICAL CHARACTERISTICS 2.8 500 t , MINORITY CARRIER LIFETIME (ps) C T, TOTAL CAPACITANCE (pF) f = 1.0 MHz 2.4 2.0 1.6 1.2 0.8 0.4 400 KRAKAUER METHOD 300 200 100 0 0 0 3.0 6.0 18 9.0 12 15 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 30 0 Figure 1. Total Capacitance 30 40 50 60 70 IF, FORWARD CURRENT (mA) 80 90 100 100 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE (m A) 20 Figure 2. Minority Carrier Lifetime 10 TA = 100C 1.0 75C 0.1 25C 0.01 0.001 10 10 TA = -40C TA = 85C 1.0 T
kage Shipping TO-92 5000 Units / Bulk TO-92 (Pb-Free) 5000 Units / Bulk SOT-23 3000 / Tape & Reel SOT-23 (Pb-Free) 3000 / Tape & Reel SOT-23 10,000 / Tape & Reel SOT-23 (Pb-Free) 10,000 / Tape & Reel Device MBD301 MBD301G MMBD301LT1 MMBD301LT1G MMBD301LT3 MMBD301LT3G For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 2 MBD301, MMBD301LT1 PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. D SEE VIEW C 3 HE E c 1 DIM A A1 b c D E e L L1 HE 2 b 0.25 e q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.2
Shipping TO-92 5,000 Units / Bulk TO-92 (Pb-Free) 5,000 Units / Bulk SOT-23 3,000 / Tape & Reel SOT-23 (Pb-Free) 3,000 / Tape & Reel SOT-23 10,000 / Tape & Reel SOT-23 (Pb-Free) 10,000 / Tape & Reel Device MBD301 MBD301G MMBD301LT1 MMBD301LT1G MMBD301LT3 MMBD301LT3G For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MBD301, MMBD301LT1 TYPICAL ELECTRICAL CHARACTERISTICS 500 f = 1.0 MHz 2.4 t , MINORITY CARRIER LIFETIME (ps) C T, TOTAL CAPACITANCE (pF) 2.8 2.0 1.6 1.2 0.8 0.4 0 0 3.0 6.0 18 9.0 12 15 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 400 KRAKAUER METHOD 300 200 100 0 30 0 Figure 1. Total Capacitance 30 40 50 60 70 IF, FORWARD CURRENT (mA) 80 90 100 100 TA = 100C 1.0 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE (m A) 20 Figure 2. Minority Carrier Lifetime 10 75C 0.1 25C 0.01 0.001 10 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) 24 10 1.0 0.1 30 TA = 25C 0.2 Figu
kage Shipping TO-92 5000 Units / Bulk TO-92 (Pb-Free) 5000 Units / Bulk SOT-23 3000 / Tape & Reel SOT-23 (Pb-Free) 3000 / Tape & Reel SOT-23 10,000 / Tape & Reel SOT-23 (Pb-Free) 10,000 / Tape & Reel Device MBD301 MBD301G MMBD301LT1 MMBD301LT1G MMBD301LT3 MMBD301LT3G For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MBD301, MMBD301LT1 TYPICAL ELECTRICAL CHARACTERISTICS 500 f = 1.0 MHz 2.4 t , MINORITY CARRIER LIFETIME (ps) C T, TOTAL CAPACITANCE (pF) 2.8 2.0 1.6 1.2 0.8 0.4 0 0 3.0 6.0 18 9.0 12 15 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 400 KRAKAUER METHOD 300 200 100 0 30 0 Figure 1. Total Capacitance 30 40 50 60 70 IF, FORWARD CURRENT (mA) 80 90 100 100 TA = 100C 1.0 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE (m A) 20 Figure 2. Minority Carrier Lifetime 10 75C 0.1 25C 0.01 0.001 10 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) 24 10 1.0 0.1 30 TA = 25C 0.2 Figu