1 34-D4 37-B4 38-C4 48-D2 21 6 7 8 13 14 B KBC3_THERM_ALERT* 9 48-D2 23 +RTC_PWR3V +3V_PWROK* VSUS_PWRGD POWER_SW* THERMTRIP1* THERMTRIP2* THERMTRIP3* SMBADDRSEL HW_LOCK* ATF_INT* VCP 10K 49.9 1% R259 R262 10K 10K C329 U17 EMC6N300 10 5 11 R257 R261 3 D11 MMBD301LT1 +3VSUS VSET THDAT_SMB THCLK_SMB REM_DIOD2_N REM_DIOD2_P REM_DIOD1_N REM_DIOD1_P INTRUDER* THERMTRIP_SIO RESERVED THERM_STP* VSS 4 22 TP10590 100nF 16V TP10589 1 2 48-D2 34-C2 48-C2 48-D2 34-B2 7-C3 17 18 19 20 12 15 16 24 3 C328 2.2nF 48-C2 7-C3 KBC3_THERM_SMDATA KBC3_THERM_SMCLK CPU2_THERMDC NO STUFF CPU2_THERMDA P3.3V R154 48-B4 18-?? CHP3_OVERT* R153 1.5K 1% TP10403 TP10404 TP10405 TP10587 TP10588 R151 TP10592 54.9 1% CPU1_PROCHOT* 3 R152 7-C3 48-A3 B 10K VTT TP10591 1 475 1% 3 48-C2 18-?? CPU3_ALERT* Q8 MMBT3904 1 2 2 Q7 MMBT3904 A A SAMSUNG ELECTRONICS 4 3 2 1 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO'S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHER
MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G Silicon Hot-Carrier Diodes www.onsemi.com Schottky Barrier Diodes These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES Features * * * * * Extremely Low Minority Carrier Lifetime - 15 ps (Typ) Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Reverse Voltage Forward Current (DC) Total Device Dissipation @ TA = 25C MBD3
MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G Silicon Hot-Carrier Diodes www.onsemi.com Schottky Barrier Diodes These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES Features * * * * * Extremely Low Minority Carrier Lifetime - 15 ps (Typ) Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Reverse Voltage Forward Current (DC) Total Device Dissipation @ TA = 25C MBD3
_HPLL VCCA_MPLL VCCA_LVDS VSSA_LVDS VCCA_TVBG VSSA_TVBG VCCA_TVDACA_1 VCCA_TVDACA_2 VCCA_TVDACB_1 VCCA_TVDACB_2 VCCA_TVDACC_1 VCCA_TVDACC_2 H22 G41 H41 AC33 C857 100nF C858 10000nF 6.3V C898 100nF 16V B26 C39 C906 H20 G20 0 C879 100nF 0 R701 4VAL 3 1 D563 MMBD301LT1 Caps should be within 250mils of edge P1.5V B585 MMZ1608S121AT C881 100nF 16V EC562 470uF B583 MMZ1608S121AT P1.5V B21 MMZ1608S121AT 4V AL P2.5V C877 10000nF 6.3V GM_MODEL C233 C235 C234 C236 100nF 22000nF 6.3V 100nF 22000nF MMZ1608S121AT 6.3V C913 E19 F19 C20 D20 EC565 470uF 100nF 16V VCCP R720 10 100nF 16V GM_MODEL AF1 AF2 P2.5V C899 E21 F21 G21 A38 B39 B584 BLM18PG181SN1 B581 MMZ1608S121AT C907 100nF 100nF 16V C902 P3.3V 100nF 16V E20 F20 100nF 16V B20 R739 B587 MMZ1608S121AT 0 P1.5V R738 10 3 1 D565 MMBD301LT1 C914 10000NF 10V C903 100nF 16V 100nF caps need to be located within 250mils A SAMSUNG ELECTRONICS 100nF 3 B 100nF caps need to be located as edge caps within 200mils C919 4 100nF C148 C149 C901 P1.5V C920 100nF
-001405 D509 DIODE-RECTIFIER B340A,40,3A,SMA,TP 0402-001568 D511 DIODE-RECTIFIER CRS02,30V,1A,S-FLAT,TP 0403-000285 ZD500 DIODE-ZENER MMBZ5240B,10V,5%,225mW,SOT-23 0404-000002 D525 DIODE-SCHOTTKY CMPSH-3,30V,100mA,SOT-23,TP 0404-000114 D503 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D504 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D520 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D521 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D526 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000157 D500 DIODE-SCHOTTKY CMPSH-3A,30V,100mA,SOT-23,TP 0404-000157 D508 DIODE-SCHOTTKY CMPSH-3A,30V,100mA,SOT-23,TP 0404-000157 D510 DIODE-SCHOTTKY CMPSH-3A,30V,100mA,SOT-23,TP 0404-001020 D515 DIODE-SCHOTTKY BAT54C,30V,200mA,SOT-23,TP 0406-001005 ZD501 DIODE-TVS SM05,6V/1mA,300,SOT-23 0406-001005 ZD502 DIODE-TVS SM05,6V/1mA,300,SOT-23 0406-001005 ZD503 DIODE-TVS SM05,6V/1mA,300,SOT-23 0406-001005 ZD504 DIODE-TVS SM05,6V/1mA,300,S
M1 G1 F19 E19 G19 H20 F17 E17 D18 C18 F18 E18 H18 G18 D19 H17 100nF C86 100nF 16V KEVIN LEE ANTONIO LAST EDIT REV DEV. STEP DATE 100nF 16V C42 P2.5V 220nF 25V 16V 470nF 220nF 25V 470nF 16V 2200nF 16V 4700nF 10V 1.0 MP 6/25/2005 10 100nF 16V 100nF 16V R96 MMBD301LT1 D17 BLM18PG181SN1 B13 C89 100nF 16V C91 P1.5V 100nF 16V P1.5V MMBD301LT1 D9 P1.5V 2200nF C94 10 R41 VTT C93 C87 100nF 16V 10uF 6.3V AL EC1 330uF 0 1 June 25, 2005 12:21:39 PM ALVISO (4/5) MAIN C102 0.047nF C112 0.047nF PAGE 0.047nF C100 15 PART NO. 46 A B C D SAMSUNG X06 9-15 OF BA41-00529A ELECTRONICS SAMSUNG Noise < 40mV p-p >= 20dB attenuation from 1.5MHz to 1.25GHz AQUILA-SONOMA C38 C67 100nF 100nF 16V 16V C98 Changed to 91 nH, 2012 R45 P1.5V C99 C62 Place near GMCH For DDRII 100nF 16V C37 100nF 16V 10uF 6.3V C66 100nF 16V TITLE P3.3V 1 VCCA_CRTDAC : Route caps within 250 mil of GMCH. Route FB within 3" of GMCH. Route VSSA_CRTDAC gnd from GMCH to decoupling cap gnd lead and then connect to the gnd plane C65 P1.8V_AUX
MMBD301LT1 Silicon Hot-Carrier Diodes SCHOTTKY Barrier Diodes ON Semiconductor Preferred Devices These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES * Extremely Low Minority Carrier Lifetime - 15 ps (Typ) * Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V * Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 1 2 CASE 182-06, STYLE 1 (TO-226AC) MAXIMUM RATINGS (TJ = 125C unless otherwise noted) MBD301 Rating 2 CATHODE MMBD301LT1 Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25C Derate above 25C PF Operating Junction Temperature Range TJ 3 280 2.8 200 2.0 mW mW/C 1 2 C -55 to +125 Storage Temp
MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G Silicon Hot-Carrier Diodes www.onsemi.com Schottky Barrier Diodes These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES Features * * * * * Extremely Low Minority Carrier Lifetime - 15 ps (Typ) Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Reverse Voltage Forward Current (DC) Total Device Dissipation @ TA = 25C MBD3
1-B2 9-C3 KBC3_THERM_SMDATA KBC3_THERM_SMCLK CPU2_THERMDC C159 17 18 19 20 2.2nF 9-C3 24-D2 CPU2_THERMDA VGA3_DMINUS C158 2.2nF 24-D2 VGA3_DPLUS 12 15 16 24 3 C www.kythuatvitinh.com FAN CONTROL OPT CIRCUIT P5V VDC Q10 FDC653N B S G FAN1 HDR-3P-1R-SMD D16 MMBD301LT1 4 3 100nF 25V D1 D2 D3 D4 C61 C62 1 1 2 5 6 C676 10000nF 6.3V 10000nF 6.3V 3 C63 4 5 100nF NO_STUFF U604 LM358D 1 2 3 4 P3.3V 1 2 3 MNT1 MNT2 B C256 R262 100nF 0 V+ OUTA IN1- OUTB IN2IN1+ GND IN2+ C60 8 7 6 5 100nF R103 R263 100K 1% 10K NO_STUFF R102 150K 1% 3 2 1 P3.3V VTEMP V+ GND HYST OS* 4 5 52-C4 SHDN_THER* LM26CIM5X-TPA U16 R105 C64 10000nF 6.3V R104 121K 1% 41-D2 10K KBC3_FANCTRL FAN3_FDBACK* D17 MMBD301LT1 41-B2 1 3 A A SAMSUNG ELECTRONICS 4 3 2 1 4 2 3 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO'S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D CPU1_D*(63:0) 8-C1 8-C2 8-D1 8-D2 VTT R818 221 1% C 12-B3 R820
13 14 B KBC3_THERM_ALERT* 9 48-D2 23 +RTC_PWR3V +3V_PWROK* VSUS_PWRGD POWER_SW* THERMTRIP1* THERMTRIP2* THERMTRIP3* SMBADDRSEL HW_LOCK* ATF_INT* VCP 10K 49.9 1% R259 R262 10K 10K C329 U17 EMC6N300 10 5 11 R257 R261 3 P3.3V_AUX 1 www.kythuatvitinh.com D11 MMBD301LT1 +3VSUS VSET THDAT_SMB THCLK_SMB REM_DIOD2_N REM_DIOD2_P REM_DIOD1_N REM_DIOD1_P INTRUDER* THERMTRIP_SIO RESERVED THERM_STP* VSS 4 22 TP10590 100nF 16V TP10589 1 2 48-D2 34-C2 48-D2 48-C2 34-B2 7-C3 17 18 19 20 12 15 16 24 3 C328 2.2nF 48-C2 7-C3 KBC3_THERM_SMDATA KBC3_THERM_SMCLK CPU2_THERMDC NO STUFF CPU2_THERMDA P3.3V R154 48-B4 18-?? CHP3_OVERT* R153 1.5K 1% TP10403 TP10404 TP10405 TP10587 TP10588 R151 TP10592 54.9 1% CPU1_PROCHOT* 3 R152 7-C3 48-A3 B 10K VTT TP10591 1 475 1% 3 48-C2 18-?? CPU3_ALERT* Q8 MMBT3904 1 2 2 Q7 MMBT3904 A A SAMSUNG ELECTRONICS 4 3 2 1 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO'S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHER
IER B340A,40,3A,SMA,TP 0402-001405 D5 DIODE-RECTIFIER B340A,40,3A,SMA,TP 0402-001405 D500 DIODE-RECTIFIER B340A,40,3A,SMA,TP 0402-001405 D8 DIODE-RECTIFIER B340A,40,3A,SMA,TP 0402-001405 D7 DIODE-RECTIFIER B340A,40,3A,SMA,TP 0404-000114 D17 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D9 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D516 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D517 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D30 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D31 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D22 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D3 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D514 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D513 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D26 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D25
MMBD301LT1 Preferred Device Silicon Hot-Carrier Diodes SCHOTTKY Barrier Diodes These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES Features * * * * Extremely Low Minority Carrier Lifetime - 15 ps (Typ) Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 Pb-Free Packages are Available MBD301 MARKING DIAGRAM TO-92 (TO-226AC) CASE 182 STYLE 1 MAXIMUM RATINGS MBD301 Rating 1 MMBD301LT1 2 Symbol Value Unit Reverse Voltage VR 30 V Total Device Dissipation @ TA = 25C Derate above 25C PF Operating Junction Temperature Range TJ -55 to +125 C Storage Temperature Range Tstg -55 to +150
ORT-CPU Cygnus,AL,T2.5,W5.5,L37.5mm,silver,AL diecasting 0902-001813 CPU500 730,1.6GHz,64Bit,uFC-BGA,479P,TR,Plastic,1.372V,27W,0to70C,-,3 BA81-00938A CPU-HEATSINK PAD CYGNUS,Copper,W15*L17*T0.15mm,Silver,8.5W/MK,18G/CC,60C/ 0404-000114 D10 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D11 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000157 D12 DIODE-SCHOTTKY CMPSH-3A,30V,100MA,SOT-23,TP 0402-001024 D13 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP 0402-001024 D14 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP 0404-000157 D16 DIODE-SCHOTTKY CMPSH-3A,30V,100MA,SOT-23,TP 0404-000114 D2 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D3 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0401-001020 D4 DIODE-SWITCHING BAW56,75V,125MA,SOT-23,TP 0406-001141 D490 DIODE-TVS PGB1010603NR,-/-/1000V,-,EIA-RS481 0406-001141 D491 DIODE-TVS PGB1010603NR,-/-/1000V,-,EIA-RS481 0404-001116 D500 DIODE-SCHOTTKY B540C,40V,5000MA,DO-214AB,TR 0402-001405 D502 DIODE-RECTIFIER B3
LE 12 Cathode 1 Anode 3 1 2 Series 3 2 Cathode Typical Characteristics Capacitance versus Reverse Voltage 2.8 TA = 25C MBD101 MMBD101LT1 MMBD352LT1* MMBD353LT1* MMBD354LT1* 0.9 TA = 25C 2.4 C T , CAPACITANCE (pF) C T , CAPACITANCE (pF) 1 0.8 0.7 2 MBD301, MMBD301LT1 1.6 1.2 0.8 0.4 0.6 MBD701, MMBD701LT1 0 0 1 2 VR, REVERSE VOLTAGE (VOLTS) 3 4 0 * EACH DIODE 5 10 15 20 25 30 35 40 45 50 VR, REVERSE VOLTAGE (VOLTS) (See Table 44) Devices listed in bold, italic are Motorola preferred devices. Motorola Small-Signal Transistors, FETs and Diodes Device Data Selector Guide 1-29 Schottky Diodes (continued) Table 44. Schottky Diodes The following is a listing of Schottky diodes that exhibit low forward voltage drop for improved circuit efficiency. V(BR)R Volts Device CT @ VR pF Max VF @ 10 mA Volts Max IR @ VR nA Max Minority Lifetime pS (TYP) Device Marking Style 1.0 @ 20 V 1.5 @ 15 V 1.0 @ 0 V 1.0 0.6 0.6 200 @ 35 V 200 @ 25 V 250 @ 3.0 V 15 15 -- -- -- -- 1 1 1 0.5 @ 30 mA 0.5 @ 30 mA 0.75 0.4 0.4 0.4
MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G Silicon Hot-Carrier Diodes http://onsemi.com Schottky Barrier Diodes These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES Features Extremely Low Minority Carrier Lifetime - 15 ps (Typ) Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 AEC Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* TO-92 2-Lead CASE 182 STYLE 1 SOT-23 (TO-236) CASE 318 STYLE 8 TO-92 SOT-23 2 CATHODE 1 A