1 34-D4 37-B4 38-C4 48-D2 21 6 7 8 13 14 B KBC3_THERM_ALERT* 9 48-D2 23 +RTC_PWR3V +3V_PWROK* VSUS_PWRGD POWER_SW* THERMTRIP1* THERMTRIP2* THERMTRIP3* SMBADDRSEL HW_LOCK* ATF_INT* VCP 10K 49.9 1% R259 R262 10K 10K C329 U17 EMC6N300 10 5 11 R257 R261 3 D11 MMBD301LT1 +3VSUS VSET THDAT_SMB THCLK_SMB REM_DIOD2_N REM_DIOD2_P REM_DIOD1_N REM_DIOD1_P INTRUDER* THERMTRIP_SIO RESERVED THERM_STP* VSS 4 22 TP10590 100nF 16V TP10589 1 2 48-D2 34-C2 48-C2 48-D2 34-B2 7-C3 17 18 19 20 12 15 16 24 3 C328 2.2nF 48-C2 7-C3 KBC3_THERM_SMDATA KBC3_THERM_SMCLK CPU2_THERMDC NO STUFF CPU2_THERMDA P3.3V R154 48-B4 18-?? CHP3_OVERT* R153 1.5K 1% TP10403 TP10404 TP10405 TP10587 TP10588 R151 TP10592 54.9 1% CPU1_PROCHOT* 3 R152 7-C3 48-A3 B 10K VTT TP10591 1 475 1% 3 48-C2 18-?? CPU3_ALERT* Q8 MMBT3904 1 2 2 Q7 MMBT3904 A A SAMSUNG ELECTRONICS 4 3 2 1 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO'S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHER
13 14 B KBC3_THERM_ALERT* 9 48-D2 23 +RTC_PWR3V +3V_PWROK* VSUS_PWRGD POWER_SW* THERMTRIP1* THERMTRIP2* THERMTRIP3* SMBADDRSEL HW_LOCK* ATF_INT* VCP 10K 49.9 1% R259 R262 10K 10K C329 U17 EMC6N300 10 5 11 R257 R261 3 P3.3V_AUX 1 www.kythuatvitinh.com D11 MMBD301LT1 +3VSUS VSET THDAT_SMB THCLK_SMB REM_DIOD2_N REM_DIOD2_P REM_DIOD1_N REM_DIOD1_P INTRUDER* THERMTRIP_SIO RESERVED THERM_STP* VSS 4 22 TP10590 100nF 16V TP10589 1 2 48-D2 34-C2 48-D2 48-C2 34-B2 7-C3 17 18 19 20 12 15 16 24 3 C328 2.2nF 48-C2 7-C3 KBC3_THERM_SMDATA KBC3_THERM_SMCLK CPU2_THERMDC NO STUFF CPU2_THERMDA P3.3V R154 48-B4 18-?? CHP3_OVERT* R153 1.5K 1% TP10403 TP10404 TP10405 TP10587 TP10588 R151 TP10592 54.9 1% CPU1_PROCHOT* 3 R152 7-C3 48-A3 B 10K VTT TP10591 1 475 1% 3 48-C2 18-?? CPU3_ALERT* Q8 MMBT3904 1 2 2 Q7 MMBT3904 A A SAMSUNG ELECTRONICS 4 3 2 1 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO'S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHER
LE 12 Cathode 1 Anode 3 1 2 Series 3 2 Cathode Typical Characteristics Capacitance versus Reverse Voltage 2.8 TA = 25C MBD101 MMBD101LT1 MMBD352LT1* MMBD353LT1* MMBD354LT1* 0.9 TA = 25C 2.4 C T , CAPACITANCE (pF) C T , CAPACITANCE (pF) 1 0.8 0.7 2 MBD301, MMBD301LT1 1.6 1.2 0.8 0.4 0.6 MBD701, MMBD701LT1 0 0 1 2 VR, REVERSE VOLTAGE (VOLTS) 3 4 0 * EACH DIODE 5 10 15 20 25 30 35 40 45 50 VR, REVERSE VOLTAGE (VOLTS) (See Table 44) Devices listed in bold, italic are Motorola preferred devices. Motorola Small-Signal Transistors, FETs and Diodes Device Data Selector Guide 1-29 Schottky Diodes (continued) Table 44. Schottky Diodes The following is a listing of Schottky diodes that exhibit low forward voltage drop for improved circuit efficiency. V(BR)R Volts Device CT @ VR pF Max VF @ 10 mA Volts Max IR @ VR nA Max Minority Lifetime pS (TYP) Device Marking Style 1.0 @ 20 V 1.5 @ 15 V 1.0 @ 0 V 1.0 0.6 0.6 200 @ 35 V 200 @ 25 V 250 @ 3.0 V 15 15 -- -- -- -- 1 1 1 0.5 @ 30 mA 0.5 @ 30 mA 0.75 0.4 0.4 0.4
IER B340A,40,3A,SMA,TP 0402-001405 D5 DIODE-RECTIFIER B340A,40,3A,SMA,TP 0402-001405 D500 DIODE-RECTIFIER B340A,40,3A,SMA,TP 0402-001405 D8 DIODE-RECTIFIER B340A,40,3A,SMA,TP 0402-001405 D7 DIODE-RECTIFIER B340A,40,3A,SMA,TP 0404-000114 D17 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D9 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D516 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D517 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D30 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D31 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D22 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D3 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D514 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D513 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D26 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D25
MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G Silicon Hot-Carrier Diodes http://onsemi.com Schottky Barrier Diodes These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES Features Extremely Low Minority Carrier Lifetime - 15 ps (Typ) Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 AEC Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* TO-92 2-Lead CASE 182 STYLE 1 SOT-23 (TO-236) CASE 318 STYLE 8 TO-92 SOT-23
MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G Silicon Hot-Carrier Diodes www.onsemi.com Schottky Barrier Diodes These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES Features * * * * * Extremely Low Minority Carrier Lifetime - 15 ps (Typ) Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Reverse Voltage Forward Current (DC) Total Device Dissipation @
MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G Silicon Hot-Carrier Diodes www.onsemi.com Schottky Barrier Diodes These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES Features * * * * * Extremely Low Minority Carrier Lifetime - 15 ps (Typ) Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Reverse Voltage Forward Current (DC) Total Device Dissipation @
MMBD301LT1 Silicon Hot-Carrier Diodes SCHOTTKY Barrier Diodes ON Semiconductor Preferred Devices These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES * Extremely Low Minority Carrier Lifetime - 15 ps (Typ) * Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V * Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 1 2 CASE 182-06, STYLE 1 (TO-226AC) MAXIMUM RATINGS (TJ = 125C unless otherwise noted) MBD301 Rating 2 CATHODE MMBD301LT1 Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25C Derate above 25C PF Operating Junction Temperature Range TJ 3 280 2.8 200 2.0 mW mW/C 1 2 C -55 to +125
ORT-CPU Cygnus,AL,T2.5,W5.5,L37.5mm,silver,AL diecasting 0902-001813 CPU500 730,1.6GHz,64Bit,uFC-BGA,479P,TR,Plastic,1.372V,27W,0to70C,-,3 BA81-00938A CPU-HEATSINK PAD CYGNUS,Copper,W15*L17*T0.15mm,Silver,8.5W/MK,18G/CC,60C/ 0404-000114 D10 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D11 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000157 D12 DIODE-SCHOTTKY CMPSH-3A,30V,100MA,SOT-23,TP 0402-001024 D13 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP 0402-001024 D14 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP 0404-000157 D16 DIODE-SCHOTTKY CMPSH-3A,30V,100MA,SOT-23,TP 0404-000114 D2 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0404-000114 D3 DIODE-SCHOTTKY MMBD301LT1,30V,-,SOT-23,TP 0401-001020 D4 DIODE-SWITCHING BAW56,75V,125MA,SOT-23,TP 0406-001141 D490 DIODE-TVS PGB1010603NR,-/-/1000V,-,EIA-RS481 0406-001141 D491 DIODE-TVS PGB1010603NR,-/-/1000V,-,EIA-RS481 0404-001116 D500 DIODE-SCHOTTKY B540C,40V,5000MA,DO-214AB,TR 0402-001405 D502 DIODE-RECTIFIER B3
MMBD301 MMBD301 Tolerance = 5% 3 3 3 4TF 2 1 2 2NC 1 1 PACKAGE SOT-23 TO-236AB SOT-23 Absolute Maximum Ratings * Symbol TSTG TA = 25C unless otherwise noted Storage Temperature Parameter Value -55 to +150 Units C -55 to +150 C TJ Operating Junction Temperture Wiv Working Inverse voltage 30 V PF Forward Power Dissipation @ TA = 25C Derate above 25C 200 2.0 mW mW/C * These ratings are limiting values above which the serviceability of the diode may be impaired. Electrical Characteristics Symbol TA=25C unless otherwise noted BV Parameter Breakdown Voltage Test Conditions IR = 10mA IR Reverse Leakage VR = 25V 200 nA VF Forward Voltage IF = 1.0mA IF = 10mA 450 600 mV mV CT Capacitance VR = 15V, f = 1.0MHz 1.5 pF (c)2003 Fairchild Semiconductor Corporation Min. 30 Max. Units V MMBD301, Rev. B1 MMBD301 Typical Characteristics 1000 o Forward Current, IF[mA] TJ=25 C 100 10 1 300 400 500 600 700 800 900 1000 Forward Voltage Drop, VF[mV] (c)2003 Fairchild Semiconductor
MMBD301LT1 Preferred Device Silicon Hot-Carrier Diodes SCHOTTKY Barrier Diodes These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. http://onsemi.com 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES Features * * * * Extremely Low Minority Carrier Lifetime - 15 ps (Typ) Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 Pb-Free Packages are Available MBD301 MARKING DIAGRAM TO-92 (TO-226AC) CASE 182 STYLE 1 MAXIMUM RATINGS MBD301 Rating 1 MMBD301LT1 2 Symbol Value Unit Reverse Voltage VR 30 V Total Device Dissipation @ TA = 25C Derate above 25C PF Operating Junction Temperature Range TJ -55 to +125 C Storage Temp
M1 G1 F19 E19 G19 H20 F17 E17 D18 C18 F18 E18 H18 G18 D19 H17 100nF C86 100nF 16V KEVIN LEE ANTONIO LAST EDIT REV DEV. STEP DATE 100nF 16V C42 P2.5V 220nF 25V 16V 470nF 220nF 25V 470nF 16V 2200nF 16V 4700nF 10V 1.0 MP 6/25/2005 10 100nF 16V 100nF 16V R96 MMBD301LT1 D17 BLM18PG181SN1 B13 C89 100nF 16V C91 P1.5V 100nF 16V P1.5V MMBD301LT1 D9 P1.5V 2200nF C94 10 R41 VTT C93 C87 100nF 16V 10uF 6.3V AL EC1 330uF 0 1 June 25, 2005 12:21:39 PM ALVISO (4/5) MAIN C102 0.047nF C112 0.047nF PAGE 0.047nF C100 15 PART NO. 46 A B C D SAMSUNG X06 9-15 OF BA41-00529A ELECTRONICS SAMSUNG Noise < 40mV p-p >= 20dB attenuation from 1.5MHz to 1.25GHz AQUILA-SONOMA C38 C67 100nF 100nF 16V 16V C98 Changed to 91 nH, 2012 R45 P1.5V C99 C62 Place near GMCH For DDRII 100nF 16V C37 100nF 16V 10uF 6.3V C66 100nF 16V TITLE P3.3V 1 VCCA_CRTDAC : Route caps within 250 mil of GMCH. Route FB within 3" of GMCH. Route VSSA_CRTDAC gnd from GMCH to decoupling cap gnd lead and then connect to the gnd plane C65 P1.8V_AUX
MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G Silicon Hot-Carrier Diodes www.onsemi.com Schottky Barrier Diodes These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES Features * * * * * Extremely Low Minority Carrier Lifetime - 15 ps (Typ) Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Reverse Voltage Forward Current (DC) Total Device Dissipation @
MMBD301LT1 Preferred Device Silicon Hot-Carrier Diodes SCHOTTKY Barrier Diodes These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. http://onsemi.com 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES Features * * * * Extremely Low Minority Carrier Lifetime - 15 ps (Typ) Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 Pb-Free Packages are Available MBD301 MARKING DIAGRAM MAXIMUM RATINGS MBD301 Rating MMBD301LT1 1 Symbol Value Unit Reverse Voltage VR 30 V Total Device Dissipation @ TA = 25C Derate above 25C PF Operating and Storage Junction Temperature Range TJ -55 to +125 C Storage Temperature Range Tstg -55 t
eas- ing energy waste. Guaranteed leakage limit is for each diode in the pair contingent upon the other diode being in a non-forwardbiased condition. * Offered in four Surface Mount package types Order this document by MMBD1010LT1/D MMBD1010LT1 MMBD2010T1 MMBD3010T1 Motorola Preferred Devices MMBD1010LT1 Available in 8 mm Tape and Reel in quantities of 3,000 Applications ANODE 3 e ESD Protection -_lqo 1 1 * Reverse Polarity Protection 30% . y CATHODE. 2 2 e Steering Logic ANODE . anki CASE 318-08, STYLE 9 MediumSpeed Switching SOT-23 (TO-236AB) MAXIMUM RATINGS MMBD201071 Rating Symbol Value Unit 3 Continuous Reverse Voltage VA 30 Vde 1 hs Peak Forward Current Ie 200 mAdc a Peak Forward Surge Current lem 500 mA (surge) CASE 419-02, STYLE 5 SC-70/SOT-323 DEVICE MARKING MMBD1010LT1 = A5 MMBD2010T1 = DP MMBD3010T1 = XS MMBD3010T1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit > Total Device Dissipation FR-4 Board (1) Pp mw 2 Ta = 25C MMBD1010LT1, MMBD301